Measurement of temperature gradient in Czochralski silicon crystal growth

Journal of Crystal Growth ◽

10.1016/s0022-0248(01)01040-5 ◽

2001 ◽

Vol 229 (1-4) ◽

pp. 6-10 ◽

Author(s):

Xinming Huang ◽

Toshinori Taishi ◽

Tiefeng Wang ◽

Keigo Hoshikawa

Keyword(s):

Crystal Growth ◽

Temperature Gradient ◽

Silicon Crystal ◽

Czochralski Silicon

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Optimal Control of Temperature Gradient in a Large Size Magnetic Czochralski Silicon Crystal Growth by Response Surface Methodology

Computational Methods in Engineering & Science ◽

10.1007/978-3-540-48260-4_176 ◽

2006 ◽

pp. 330-330 ◽

Author(s):

H. P. Yu ◽

Y. K. Sui ◽

J. Wang ◽

X. L. Dai ◽

G. P. An

Keyword(s):

Optimal Control ◽

Response Surface Methodology ◽

Crystal Growth ◽

Temperature Gradient ◽

Response Surface ◽

Silicon Crystal ◽

Czochralski Silicon ◽

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Czochralski Silicon Crystal Growth for Photovoltaic Applications

Advances in Materials Research - Crystal Growth of Silicon for Solar Cells ◽

10.1007/978-3-642-02044-5_2 ◽

2009 ◽

pp. 25-39 ◽

Author(s):

Chung-Wen Lan ◽

Chao-Kuan Hsieh ◽

Wen-Chin Hsu

Keyword(s):

Crystal Growth ◽

Silicon Crystal ◽

Czochralski Silicon ◽

Photovoltaic Applications

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Numerical simulation of oxygen transport during the Czochralski silicon crystal growth with a cusp magnetic field

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.10.040 ◽

2014 ◽

Vol 401 ◽

pp. 888-894 ◽

Author(s):

J.-C. Chen ◽

P.-C. Guo ◽

C.-H. Chang ◽

Y.-Y. Teng ◽

C. Hsu ◽

...

Keyword(s):

Magnetic Field ◽

Numerical Simulation ◽

Crystal Growth ◽

Oxygen Transport ◽

Silicon Crystal ◽

Czochralski Silicon ◽

Cusp Magnetic Field

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Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.02.005 ◽

2013 ◽

Vol 371 ◽

pp. 60-69 ◽

Author(s):

Maksims Kirpo

Keyword(s):

Crystal Growth ◽

Silicon Crystal ◽

Ansys Fluent ◽

Global Simulation ◽

Czochralski Silicon

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Numerical analysis for transient point defect behavior in Czochralski silicon crystal growth

Korean Journal of Chemical Engineering ◽

10.1007/bf02719499 ◽

2004 ◽

Vol 21 (6) ◽

pp. 1231-1234 ◽

Author(s):

Jong Hoe Wang ◽

Jong-In Im ◽

Kyoung-Hee Lee

Keyword(s):

Crystal Growth ◽

Numerical Analysis ◽

Point Defect ◽

Silicon Crystal ◽

Czochralski Silicon ◽

Defect Behavior

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Investigation of nitrogen behaviors during Czochralski silicon crystal growth

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.10.087 ◽

2011 ◽

Vol 318 (1) ◽

pp. 178-182 ◽

Author(s):

Xuegong Yu ◽

Deren Yang ◽

Keigo Hoshikawa

Keyword(s):

Crystal Growth ◽

Silicon Crystal ◽

Czochralski Silicon

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Phase field modelling on the growth dynamics of double voids of different sizes during czochralski silicon crystal growth

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/170/1/012020 ◽

2017 ◽

Vol 170 ◽

pp. 012020

Author(s):

X J Guan ◽

J Wang

Keyword(s):

Crystal Growth ◽

Phase Field ◽

Silicon Crystal ◽

Growth Dynamics ◽

Czochralski Silicon ◽

Field Modelling

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Optimization of the melt/crystal interface shape and oxygen concentration during the Czochralski silicon crystal growth process using an artificial neural network and a genetic algorithm

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2020.125828 ◽

2020 ◽

Vol 548 ◽

pp. 125828

Author(s):

Xiaofang Qi ◽

Wencheng Ma ◽

Yifan Dang ◽

Wenjia Su ◽

Lijun Liu

Keyword(s):

Neural Network ◽

Genetic Algorithm ◽

Artificial Neural Network ◽

Crystal Growth ◽

Growth Process ◽

Silicon Crystal ◽

Interface Shape ◽

Czochralski Silicon ◽

Crystal Growth Process ◽

Crystal Interface

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A thermal model for czochralski silicon crystal growth with an axial magnetic field

Journal of Crystal Growth ◽

10.1016/0022-0248(90)90133-6 ◽

1990 ◽

Vol 104 (2) ◽

pp. 327-344 ◽

Author(s):

L.N. Hjellming

Keyword(s):

Magnetic Field ◽

Crystal Growth ◽

Thermal Model ◽

Axial Magnetic Field ◽

Silicon Crystal ◽

Czochralski Silicon

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A continuous Czochralski silicon crystal growth system

Journal of Crystal Growth ◽

10.1016/s0022-0248(02)02241-8 ◽

2003 ◽

Vol 250 (1-2) ◽

pp. 209-214 ◽

Author(s):

C. Wang ◽

H. Zhang ◽

T.H. Wang ◽

T.F. Ciszek

Keyword(s):

Crystal Growth ◽

Silicon Crystal ◽

Czochralski Silicon ◽

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