scholarly journals Optimization of the melt/crystal interface shape and oxygen concentration during the Czochralski silicon crystal growth process using an artificial neural network and a genetic algorithm

2020 ◽  
Vol 548 ◽  
pp. 125828
Author(s):  
Xiaofang Qi ◽  
Wencheng Ma ◽  
Yifan Dang ◽  
Wenjia Su ◽  
Lijun Liu
Keyword(s):  
Neural Network ◽  
Genetic Algorithm ◽  
Artificial Neural Network ◽  
Crystal Growth ◽  
Growth Process ◽  
Silicon Crystal ◽  
Interface Shape ◽  
Czochralski Silicon ◽  
Crystal Growth Process ◽  
Crystal Interface

scholarly journals Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Ying-Yang Teng ◽  
Jyh-Chen Chen ◽  
Chung-Wei Lu ◽  
Cheng-Chuan Huang ◽  
Wan-Ting Wun ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Oxygen Concentration ◽  
Concentration Distribution ◽  
Growth Process ◽  
Silicon Crystal ◽  
Crucible Wall ◽  
Crystal Growth Process ◽  
Silicon Melt ◽  
Average Oxygen Concentration ◽  
Crystal Interface

We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.

Hydrodynamical aspects of the floating zone silicon crystal growth process

2014 ◽  
Vol 401 ◽  
pp. 120-123 ◽  
Author(s):  
Kirils Surovovs ◽  
Andris Muiznieks ◽  
Andrejs Sabanskis ◽  
Janis Virbulis
Keyword(s):  
Crystal Growth ◽  
Growth Process ◽  
Silicon Crystal ◽  
Floating Zone ◽  
Crystal Growth Process

Thermal Analysis for Designing the Hot-Zone of a Silicon Czochralski Crystal Furnace

2012 ◽  
Author(s):  
Jun Liu
Keyword(s):  
Thermal Analysis ◽  
Crystal Growth ◽  
Power Consumption ◽  
Growth Process ◽  
Silicon Crystal ◽  
Analysis Model ◽  
Crystal Growth Process ◽  
Hot Zone

The present work is aimed at developing an axial symmetric thermal analysis model for designing the hot-zone of a silicon crystal growth furnace. An analysis model is developed which can be used to predict the approximate pulling rate and power consumption during silicon crystal growth process when utilizing the Czochralski (CZ) method. In addition, the effectiveness of this analysis model is experimentally confirmed.

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