A thermal model for czochralski silicon crystal growth with an axial magnetic field

1990 ◽  
Vol 104 (2) ◽  
pp. 327-344 ◽  
Author(s):  
L.N. Hjellming
Keyword(s):  
Magnetic Field ◽  
Crystal Growth ◽  
Thermal Model ◽  
Axial Magnetic Field ◽  
Silicon Crystal ◽  
Czochralski Silicon

Numerical Simulation of 300mm CZ Silicon Crystal Growth with Axial Magnetic Fields

2011 ◽  
Vol 689 ◽  
pp. 179-183
Author(s):  
Wen Ting Xu ◽  
Hai Ling Tu ◽  
Qing Chang ◽  
Qing Hua Xiao ◽  
Xiao Lin Dai ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Numerical Simulation ◽  
Growth Rate ◽  
Crystal Growth ◽  
Magnetic Fields ◽  
Growth Rates ◽  
Axial Magnetic Field ◽  
Silicon Crystal ◽  
Crystal Interfaces ◽  
Hot Zone

We studied the optimization of 300mm CZ silicon crystal growth in 28 inch hot zone with axial magnetic field. The convex of melt-crystal interfaces toward to the crystal are observed in our simulations under different growth velocities (0.3mm/min, 0.5mm/min and 0.65mm/min). The convections in melt were illustrated under different growth rates and intensities of magnetic field. The growth rate of 0.5mm/min and axial magnetic fields intensity of 0.3T were recommended as an appropriate control condition.

Measurement of temperature gradient in Czochralski silicon crystal growth

2001 ◽  
Vol 229 (1-4) ◽  
pp. 6-10 ◽  
Author(s):  
Xinming Huang ◽  
Toshinori Taishi ◽  
Tiefeng Wang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Silicon Crystal ◽  
Czochralski Silicon
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