MOCVD growth of MgSe thin films on GaAs substrates

Monocrystalline, epitaxial PbS thin films were deposited from acidic bath on GaAs substrates. The effect of deposition mechanism on the optical properties of the films was analyzed using the Urbach theory.

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The study of optical properties of Zn/sub 1-x/MN/sub x/Se thin films grown by MOCVD on GaAs substrates

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ◽

10.1109/commad.2002.1237311 ◽

2005 ◽

Author(s):

S.L. Lu ◽

C.L. Yang ◽

J.M. Dai ◽

J.S. Hsuang ◽

W.K. Ge ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Gaas Substrates

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Mg:TiO2 alloy thin films based MOS capacitors grown on GaAs substrates

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2021.159178 ◽

2021 ◽

Vol 868 ◽

pp. 159178

Author(s):

Avijit Dalal ◽

Shyam Murli Manohar Dhar Dwivedi ◽

Chiranjib Ghosh ◽

Rini Lahiri ◽

Mohamed Henini ◽

...

Keyword(s):

Thin Films ◽

Mos Capacitors ◽

Gaas Substrates

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Effect of a MgO interlayer on the structural and magnetic properties of Co2Cr0.6Fe0.4Al thin films epitaxially grown on GaAs substrates

Journal of Applied Physics ◽

10.1063/1.2712164 ◽

2007 ◽

Vol 101 (6) ◽

pp. 063904 ◽

Cited By ~ 10

Author(s):

T. Yano ◽

T. Uemura ◽

K.-i. Matsuda ◽

M. Yamamoto

Keyword(s):

Thin Films ◽

Magnetic Properties ◽

Gaas Substrates ◽

Structural And Magnetic Properties

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Thermal strain in indium thin films deposited on GaAs substrates

Thin Solid Films ◽

10.1016/0040-6090(94)90181-3 ◽

1994 ◽

Vol 250 (1-2) ◽

pp. 164-171

Author(s):

H. Ijichi ◽

O. Tadanaga ◽

A. Otsuki ◽

Masanori Murakami

Keyword(s):

Thin Films ◽

Thermal Strain ◽

Gaas Substrates

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Highly Doped P-Type, N-Type CdS Thin Films and Diodes

MRS Proceedings ◽

10.1557/proc-329-173 ◽

1993 ◽

Vol 329 ◽

Author(s):

Wen P. Shen ◽

Hoi S. Kwok

Keyword(s):

Thin Films ◽

Doping Concentration ◽

Annealing Process ◽

Laser Deposition ◽

Post Annealing ◽

Gaas Substrates ◽

Cds Thin Film ◽

Good Crystalline Quality ◽

Cds Thin Films ◽

P Type

AbstractCdS thin films with doping concentration as high as 1017 cm-3 for p-type or 1021 cm-3 for n-type were achieved by pulsed excimer laser deposition without any post-annealing process. These films were grown on InP or GaAs substrates with good crystalline quality. By using this technique, CdS thin film p-n junctions were produced successfully.

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