The effect of deposition mechanism on the properties of epitaxial PbS films grown from acidic bath

2021 ◽  
Vol 5 (6) ◽  
pp. 2860-2866
Author(s):  
Maayan Perez ◽  
Michael Shandalov ◽  
Yuval Golan ◽  
Tzvi Templeman ◽  
Vladimir Ezersky ◽  
...  

Monocrystalline, epitaxial PbS thin films were deposited from acidic bath on GaAs substrates. The effect of deposition mechanism on the optical properties of the films was analyzed using the Urbach theory.

2016 ◽  
Vol 23 (03) ◽  
pp. 1650014 ◽  
Author(s):  
Z. MAKHDOUMI KAKHAKI ◽  
A. YOUZBASHI ◽  
P. SANGPOUR ◽  
A. KAZEMZADEH ◽  
N. NADERI ◽  
...  

Effects of buffer salt concentration on the rate of deposition, dominated deposition mechanism and subsequently the structural, morphological, and optical properties of cadmium sulfide (CdS) thin films deposited by chemical bath deposition (CBD) on glass substrate were investigated. The precursors were chosen to be cadmium chloride (CdCl2) as the cadmium source, thiourea (CS(NH[Formula: see text]) as the sulfur source, ammonium nitrate (NH4NO3) as the buffer salt and ammonia as the complexing agent and the pH controller. The influence of the NH4NO3 concentration on the structure, morphology, film uniformity, stoichiometry and optical properties of CdS thin films was also studied by X-ray diffractometer (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive X-ray (EDX) spectroscope, uv–visible and photoluminescence (PL) spectroscopes. The XRD studies revealed that all the deposited films exhibited a (002)h/(111)c preferred orientation. The crystallite size was increased from 20[Formula: see text]nm to 30[Formula: see text]nm by the increase of concentration of NH4NO3 from 0.5[Formula: see text]M to 2.5[Formula: see text]M. The morphology of CdS thin films were agglomerated spherical particles consisted of smaller particles. The surface of thin films deposited at the NH4NO3 concentration of 0.5[Formula: see text]M was compact and smooth. The increase of the concentration of NH4NO3 decreased the packing density of the films. The optical band gap was in the range of 2.25–2.4[Formula: see text]eV, which was decreased by the decrement of packing density. The PL spectra showed two peaks centered at 400[Formula: see text]nm and 500[Formula: see text]nm which are attributed to violet and band-to-band emissions, respectively.


2013 ◽  
Vol 787 ◽  
pp. 143-147 ◽  
Author(s):  
Rui Ting Hao ◽  
Jie Guo ◽  
Shu Kang Deng ◽  
Ying Liu ◽  
Yan Mei Miao ◽  
...  

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.


1983 ◽  
Vol 44 (C10) ◽  
pp. C10-363-C10-366 ◽  
Author(s):  
J. Vlieger ◽  
M. M. Wind

2018 ◽  
Vol 23 (3) ◽  
pp. 230-239
Author(s):  
E.P. Zaretskaya ◽  
◽  
V.F. Gremenok ◽  
A.V. Stanchik ◽  
A.N. Pyatlitski ◽  
...  

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