High-field magnetoluminescence of ZnSe quantum wires

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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Study of segregation in La1.8Sr0.2CuO4 superconductor by STEM-EDS microanalysis

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100125294 ◽

1987 ◽

Vol 45 ◽

pp. 54-55

Author(s):

T. F. Kelly ◽

P. J. Lee ◽

E. E. Hellstrom ◽

D. C. Larbalestier

Keyword(s):

Rare Earth ◽

High Field ◽

Transport Current ◽

Total Thickness ◽

New Class ◽

Ceramic Superconductors ◽

Current Densities ◽

Group Ii ◽

Eds Microanalysis

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.

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Characterization of GaAs/AlGaAs quantum wells and quantum wires by chemical lattice imaging

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171419 ◽

1994 ◽

Vol 52 ◽

pp. 736-737

Author(s):

A. Carlsson ◽

J.-O. Malm ◽

A. Gustafsson

Keyword(s):

Quantum Well ◽

Quantum Wells ◽

Quantum Wires ◽

Vapour Phase ◽

Quantitative Information ◽

Lattice Imaging ◽

Vapour Phase Epitaxy ◽

Metalorganic Vapour Phase Epitaxy ◽

High Resolution Images

In this study a quantum well/quantum wire (QW/QWR) structure grown on a grating of V-grooves has been characterized by a technique related to chemical lattice imaging. This technique makes it possible to extract quantitative information from high resolution images.The QW/QWR structure was grown on a GaAs substrate patterned with a grating of V-grooves. The growth rate was approximately three monolayers per second without growth interruption at the interfaces. On this substrate a barrier of nominally Al0.35 Ga0.65 As was deposited to a thickness of approximately 300 nm using metalorganic vapour phase epitaxy . On top of the Al0.35Ga0.65As barrier a 3.5 nm GaAs quantum well was deposited and to conclude the structure an additional approximate 300 nm Al0.35Ga0.65 As was deposited. The GaAs QW deposited in this manner turns out to be significantly thicker at the bottom of the grooves giving a QWR running along the grooves. During the growth of the barriers an approximately 30 nm wide Ga-rich region is formed at the bottom of the grooves giving a Ga-rich stripe extending from the bottom of each groove to the surface.

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