HIGH FIELD N. M. R. IN Cu(NO3)2 2 1/2 H2O BELOW 1°K

1971 ◽  
Vol 32 (C1) ◽  
pp. C1-943-C1-945
Author(s):  
M. W. van TOL ◽  
M. MATSUURA ◽  
N. J. POULIS
Keyword(s):  
Author(s):  
T. F. Kelly ◽  
P. J. Lee ◽  
E. E. Hellstrom ◽  
D. C. Larbalestier

Recently there has been much excitement over a new class of high Tc (>30 K) ceramic superconductors of the form A1-xBxCuO4-x, where A is a rare earth and B is from Group II. Unfortunately these materials have only been able to support small transport current densities 1-10 A/cm2. It is very desirable to increase these values by 2 to 3 orders of magnitude for useful high field applications. The reason for these small transport currents is as yet unknown. Evidence has, however, been presented for superconducting clusters on a 50-100 nm scale and on a 1-3 μm scale. We therefore planned a detailed TEM and STEM microanalysis study in order to see whether any evidence for the clusters could be seen.A La1.8Sr0.2Cu04 pellet was cut into 1 mm thick slices from which 3 mm discs were cut. The discs were subsequently mechanically ground to 100 μm total thickness and dimpled to 20 μm thickness at the center.


1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 339-342 ◽  
Author(s):  
L Parthier
Keyword(s):  

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-393-C8-394 ◽  
Author(s):  
S. Miura ◽  
T. Kaneko ◽  
S. Abe ◽  
G. Kido ◽  
H. Yoshida ◽  
...  

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-505-C8-506 ◽  
Author(s):  
J. J. M. Franse ◽  
R. J. Radwaski ◽  
S. Sinnema

Skull Base ◽  
2005 ◽  
Vol 15 (S 2) ◽  
Author(s):  
Boris von Keller ◽  
R. Fahlbusch ◽  
O. Ganslandt ◽  
C. Nimsky

Author(s):  
L Scheef ◽  
M Daamen ◽  
U Fehse ◽  
MW Landsberg ◽  
DO Granath ◽  
...  

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


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