Lasing and dynamics of photoexcited carriers in graded-index separate confinement Zn1−xCdxSe single quantum wells

1998 ◽  
Vol 184-185 (1-2) ◽  
pp. 562-565
Author(s):  
L Calcagnile
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Graded Index

Lasing and dynamics of photoexcited carriers in graded-index separate confinement Zn1−xCdxSe single quantum wells

1998 ◽  
Vol 184-185 ◽  
pp. 562-565 ◽  
Author(s):  
L. Calcagnile ◽  
G. Alfeo ◽  
M. Lomascolo ◽  
R. Cingolani ◽  
C. Gerardi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Graded Index

scholarly journals Non-isothermal phase-field simulations of laser-written in-plane SiGe heterostructures for photonic applications

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Ozan Aktas ◽  
Yuji Yamamoto ◽  
Mehmet Kaynak ◽  
Anna C. Peacock
Keyword(s):  
Quantum Wells ◽  
Phase Field ◽  
Silicon Germanium ◽  
Phase Segregation ◽  
Layer By Layer ◽  
Beam Position ◽  
Graded Index ◽  
Semiconductor Alloy ◽  
Scan Speed ◽  
Growth Methods

AbstractAdvanced solid-state devices, including lasers and modulators, require semiconductor heterostructures for nanoscale engineering of the electronic bandgap and refractive index. However, existing epitaxial growth methods are limited to fabrication of vertical heterostructures grown layer by layer. Here, we report the use of finite-element-method-based phase-field modelling with thermocapillary convection to investigate laser inscription of in-plane heterostructures within silicon-germanium films. The modelling is supported by experimental work using epitaxially-grown Si0.5Ge0.5 layers. The phase-field simulations reveal that various in-plane heterostructures with single or periodic interfaces can be fabricated by controlling phase segregation through modulation of the scan speed, power, and beam position. Optical simulations are used to demonstrate the potential for two devices: graded-index waveguides with Ge-rich (>70%) cores, and waveguide Bragg gratings with nanoscale periods (100–500 nm). Periodic heterostructure formation via sub-millisecond modulation of the laser parameters opens a route for post-growth fabrication of in-plane quantum wells and superlattices in semiconductor alloy films.

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 919-922
Author(s):  
Y.-H. Zhang ◽  
J.L. Merz ◽  
M. Potemski ◽  
J.C. Maan ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Electron Plasmas
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