Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
2006 ◽  
Vol 88 (22) ◽  
pp. 221113 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Motyka ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
...  

2002 ◽  
Vol 744 ◽  
Author(s):  
M. O. Manasreh ◽  
D. J. Friedman ◽  
W. Q. Ma ◽  
C. L. Workman ◽  
C. E. George ◽  
...  

ABSTRACTPhotoluminescence (PL) spectra of interband transitions in GaInNAs/GaAs single quantum wells grown by metalorganic chemical vapor deposition technique on semi-insulating GaAs substrates were measured at 77 K for several samples grown with different In composition and dimethylhydrazine (DMH)/III ratios. The results show that the PL intensity increases as the In mole fraction is increased from 0 to 25%, but the PL intensity is degraded for samples with an In mole fraction of 30% or higher. The peak position energies of the PL spectra were investigated as a function of the DMH/III ratio. Thermal annealing effect induced a blue-shift in the PL spectra peak position energy in samples grown with high DMH/III ratio.


1993 ◽  
Vol 47 (12) ◽  
pp. 7198-7207 ◽  
Author(s):  
A. Dimoulas ◽  
J. Leng ◽  
K. P. Giapis ◽  
A. Georgakilas ◽  
C. Michelakis ◽  
...  

2009 ◽  
Vol 41 (7) ◽  
pp. 559-565 ◽  
Author(s):  
J. H. You ◽  
J. T. Woo ◽  
D. U. Lee ◽  
T. W. Kim ◽  
K. H. Yoo ◽  
...  

2014 ◽  
Vol 65 (7) ◽  
pp. 1096-1100
Author(s):  
Hyeon Soo Kim ◽  
Soon Young Jeong ◽  
Seoung-Hwan Park

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