Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

1998 ◽  
Vol 184-185 ◽  
pp. 863-866 ◽  
Author(s):  
Jun Suda ◽  
Masahiro Ogawa ◽  
Keiichiro Sakurai ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Light Hole ◽  
Strained Quantum Wells

scholarly journals Valence Band Mixing in GaAs/AlGaAs Quantum Wells Adjacent to Self-Assembled InAlAs Antidots

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Valence Band ◽  
Energy Barrier ◽  
Heavy Hole ◽  
Electronic States ◽  
Light Hole ◽  
Photoluminescence Excitation ◽  
Band Mixing ◽  
Valence Band Mixing

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.

Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

2013 ◽  
Vol 22 (3) ◽  
pp. 037802 ◽  
Author(s):  
Yi Gu ◽  
Yong-Gang Zhang ◽  
Yu-Xin Song ◽  
Hong Ye ◽  
Yuan-Ying Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Strained Quantum Wells ◽  
Temperature Dependent Photoluminescence

Magneto-optical properties of biaxially strained quantum wells

1994 ◽  
Vol 70 (3) ◽  
pp. 397-408 ◽  
Author(s):  
L. Viña ◽  
L. Muñoz ◽  
N. Mestres ◽  
E. S. Koteles ◽  
D. C. Bertolet ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Strained Quantum Wells

Optical Properties of Light-Hole Excitons in MOVPE Grown (Ga,In)As-GaAs Quantum Wells

1994 ◽  
Vol 340 ◽  
Author(s):  
P. Bigenwald ◽  
O. Laire ◽  
X. Zhang ◽  
O. Briot ◽  
B. Gil ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Growth Parameters ◽  
Vapour Phase ◽  
Light Hole ◽  
Type I ◽  
Vapour Phase Epitaxy ◽  
Novel Approach ◽  
Reflectivity Spectra ◽  
Metalorganic Vapour Phase Epitaxy

ABSTRACTWe study the optical properties of metalorganic vapour phase epitaxy (MOVPE) grown (Ga,In)As-GaAs single quantum wells as a function of the growth parameters. Our objective is to study the properties of the type II light-hole excitons with light-hole wave function delocalized in the thick GaAs layers and electrons confined in the ternary alloy. However, marked structures (like for type I excitons) are observed in the reflectivity spectra. This we interpret in the context of a novel approach of the exciton problem via a self-consistent calculation of the electron-hole interaction.

Optical properties of quaternary GaInAsSb/AlGaAsSb strained quantum wells

1996 ◽  
Vol 8 (26) ◽  
pp. 4751-4766 ◽  
Author(s):  
W Z Shen ◽  
S C Shen ◽  
W G Tang ◽  
Y Chang ◽  
Y Zhao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Strained Quantum Wells
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