Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

2013 ◽  
Vol 22 (3) ◽  
pp. 037802 ◽  
Author(s):  
Yi Gu ◽  
Yong-Gang Zhang ◽  
Yu-Xin Song ◽  
Hong Ye ◽  
Yuan-Ying Cao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Temperature Dependent ◽  
Strained Quantum Wells ◽  
Temperature Dependent Photoluminescence

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Optical properties of light-hole excitons in ZnSSe/ZnMgSSe tensile-strained quantum wells

1998 ◽  
Vol 184-185 ◽  
pp. 863-866 ◽  
Author(s):  
Jun Suda ◽  
Masahiro Ogawa ◽  
Keiichiro Sakurai ◽  
Yoichi Kawakami ◽  
Shizuo Fujita ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Light Hole ◽  
Strained Quantum Wells

Influence of excitation power on temperature-dependent photoluminescence of phase-separated InGaN quantum wells

2016 ◽  
Vol 14 (4) ◽  
pp. 042302-42306 ◽  
Author(s):  
Haiyan Lü Haiyan Lü ◽  
Yuanjie Lü Yuanjie Lü ◽  
Qiang Wang Qiang Wang ◽  
Jianfei Li Jianfei Li ◽  
Zhihong Feng Zhihong Feng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Excitation Power ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence ◽  
Ingan Quantum Wells

Strain Effect on Temperature Dependent Photoluminescence from InxGa1-xAs/GaAs Quantum Wells

2011 ◽  
Vol 32 (2) ◽  
pp. 164-168
Author(s):  
叶志成 YE Zhi-cheng ◽  
舒永春 SHU Yong-chun ◽  
曹雪 CAO Xue ◽  
龚亮 GONG Liang ◽  
姚江宏 YAO Jiang-hong ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strain Effect ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Investigation of temperature-dependent photoluminescence in multi-quantum wells

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Yutao Fang ◽  
Lu Wang ◽  
Qingling Sun ◽  
Taiping Lu ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence

scholarly journals Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature

1997 ◽  
Vol 2 ◽  
Author(s):  
C. Guénaud ◽  
E. Deleporte ◽  
M. Voos ◽  
C. Delalande ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Thin Layers ◽  
Photoluminescence Excitation ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Yellow Band ◽  
Neutral Donor ◽  
Photoluminescence Line ◽  
Temperature Dependent Photoluminescence

We report on photoluminescence and photoluminescence excitation experiments performed on hexagonal GaN layers grown on a Sapphire substrate. Information about extrinsic and intrinsic optical properties have been obtained. We show that, at low temperature, the fundamental A excitons are preferentially involved in the relaxation towards the neutral donor bound exciton photoluminescence line, while electron-hole pairs rather participate in the relaxation towards D0−A0 emission and the yellow band. The relaxation from the A exciton towards the yellow band and D0−A0 emission is made easier by temperature. The band structure of the GaN layers has been determined from temperature dependent photoluminescence excitation spectroscopy: A and C excitons and A continuum band gap have been identified up to 210K.

Magneto-optical properties of biaxially strained quantum wells

1994 ◽  
Vol 70 (3) ◽  
pp. 397-408 ◽  
Author(s):  
L. Viña ◽  
L. Muñoz ◽  
N. Mestres ◽  
E. S. Koteles ◽  
D. C. Bertolet ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Wells ◽  
Strained Quantum Wells

Influence of mixed organic cations on the structural and optical properties of lead tri-iodide perovskites

Nanoscale ◽  
2019 ◽  
Vol 11 (12) ◽  
pp. 5215-5221 ◽  
Author(s):  
Guotao Pang ◽  
Xiaoqi Lan ◽  
Ruxue Li ◽  
Zhubing He ◽  
Rui Chen
Keyword(s):  
Phase Transition ◽  
Optical Properties ◽  
Organic Cation ◽  
Organic Cations ◽  
Temperature Dependent ◽  
Structural And Optical Properties ◽  
Transition Range ◽  
Phase Transition Range ◽  
Temperature Dependent Photoluminescence

Temperature-dependent photoluminescence in the phase transition range shows that mixed-organic-cation perovskites are more stable than their pure counterparts.

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