Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Light Emission ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

Self-assembled quantum dots and nanoholes by molecular beam epitaxial growth and atomically precise in situ etching

2002 ◽  
Vol 722 ◽  
Author(s):  
S. Kiravittaya ◽  
R. Songmuang ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Flat Surface ◽  
Local Strain ◽  
Growth Conditions ◽  
Etching Depth ◽  
Molecular Beam Epitaxial ◽  
Self Assembled ◽  
Molecular Beam Epitaxial Growth

AbstractEnsembles of homogeneous self-assembled quantum dots (QDs) and nanoholes are fabricated using molecular beam epitaxy in combination with atomically precise in situ etching. Self-assembled InAs QDs with height fluctuations of ±5% were grown using a very low indium growth rate on GaAs (001) substrate. If these dots are capped with GaAs at low temperature, strong room temperature emission at 1.3 νm with a linewidth of 21 meV from the islands is observed. Subsequently, we fabricate homogeneous arrays of nanoholes by in situ etching the GaAs surface of the capped InAs QDs with AsBr3. The depths of the nanoholes can be tuned over a range of 1-6 nm depending on the nominal etching depth and the initial capping layer thickness. We appoint the formation of nanoholes to a pronounced selectivity of the AsBr3 to local strain fields. The holes can be filled with InAs again such that an atomically flat surface is recovered. QDs in the second layer preferentially form at those sites, where the holes were initially created. Growth conditions for the second InAs layer can be chosen in such a way that lateral QD molecules form on a flat surface.

Molecular beam epitaxial growth of interdigitated quantum dots for heterojunction solar cells

2019 ◽  
Vol 512 ◽  
pp. 159-163 ◽  
Author(s):  
C. Chevuntulak ◽  
T. Rakpaises ◽  
N. Sridumrongsak ◽  
S. Thainoi ◽  
S. Kiravittaya ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Heterojunction Solar Cells ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Molecular beam epitaxial growth of GaSb/GaAs quantum dots on Ge substrates

2014 ◽  
Vol 401 ◽  
pp. 441-444 ◽  
Author(s):  
Maetee Kunrugsa ◽  
Suwit Kiravittaya ◽  
Suwat Sopitpan ◽  
Somchai Ratanathammaphan ◽  
Somsak Panyakeow
Keyword(s):  
Quantum Dots ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth
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