Modeling of silicon carbide crystal growth by physical vapor transport method

2000 ◽  
Vol 211 (1-4) ◽  
pp. 352-359 ◽  
Author(s):  
R.-H Ma ◽  
Q.-S Chen ◽  
H Zhang ◽  
V Prasad ◽  
C.M Balkas ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Effect of Temperature Gradient on AlN Crystal Growth by Physical Vapor Transport Method

2019 ◽  
Vol 19 (11) ◽  
pp. 6736-6742 ◽  
Author(s):  
Guodong Wang ◽  
Lei Zhang ◽  
Yong Wang ◽  
Yongliang Shao ◽  
Chengmin Chen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Vapor Transport ◽  
Effect Of Temperature ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Origin of domain structure in hexagonal silicon carbide boules grown by the physical vapor transport method

2000 ◽  
Vol 220 (3) ◽  
pp. 308-315 ◽  
Author(s):  
Seoyong Ha ◽  
Noel T Nuhfer ◽  
Gregory S Rohrer ◽  
Marc De Graef ◽  
Marek Skowronski
Keyword(s):  
Silicon Carbide ◽  
Domain Structure ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method
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