Comparison of the Thermal Stress Behavior of AlN Single Crystal Growth on AlN and SiC Seeds via the Physical Vapor Transport Method through Three-Dimensional Numerical Modeling and Simulation

2021 ◽  
Author(s):  
Yinting Zhao ◽  
Qikun Wang ◽  
Gang Zhang ◽  
Jiali Huang ◽  
Danyang Fu ◽  
...  
Keyword(s):  
Numerical Modeling ◽  
Thermal Stress ◽  
Crystal Growth ◽  
Three Dimensional ◽  
Single Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Numerical Modeling And Simulation ◽  
Transport Method ◽  
Vapor Transport Method

Effect of Temperature Gradient on AlN Crystal Growth by Physical Vapor Transport Method

2019 ◽  
Vol 19 (11) ◽  
pp. 6736-6742 ◽  
Author(s):  
Guodong Wang ◽  
Lei Zhang ◽  
Yong Wang ◽  
Yongliang Shao ◽  
Chengmin Chen ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Vapor Transport ◽  
Effect Of Temperature ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Modeling of silicon carbide crystal growth by physical vapor transport method

2000 ◽  
Vol 211 (1-4) ◽  
pp. 352-359 ◽  
Author(s):  
R.-H Ma ◽  
Q.-S Chen ◽  
H Zhang ◽  
V Prasad ◽  
C.M Balkas ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Crystal Growth ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method

Seed Polarity Dependence of SiC SingleCrystal Growth by Using a Physical Vapor Transport Method

2009 ◽  
Vol 54 (5(1)) ◽  
pp. 1834-1839 ◽  
Author(s):  
Jung-Gon Kim ◽  
Chang-Hyun Son ◽  
Jung-Woo Choi ◽  
Jung-Kyu Kim ◽  
Won-Jae Lee ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Method ◽  
Vapor Transport Method
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