Interaction and dynamics of polymer solutions at the air/liquid interface by laser light scattering

1998 ◽  
Vol 235-237 ◽  
pp. 464-469 ◽  
Author(s):  
Q.R Huang ◽  
C.H Wang
Keyword(s):  
Light Scattering ◽  
Polymer Solutions ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Liquid Interface ◽  
Air Liquid Interface

Laser light scattering studies of ternary polymer solutions

1992 ◽  
Vol 27 (3) ◽  
pp. 261-265 ◽  
Author(s):  
Peter J. Daivis ◽  
David N. Pinder
Keyword(s):  
Light Scattering ◽  
Polymer Solutions ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Ternary Polymer

Surface Light-Scattering at the Air−Liquid Interface:  From Newtonian to Viscoelastic Polymer Solutions

2005 ◽  
Vol 109 (10) ◽  
pp. 4694-4699 ◽  
Author(s):  
Mercedes G. Muñoz ◽  
Mario Encinar ◽  
Laura J. Bonales ◽  
Francisco Ortega ◽  
Francisco Monroy ◽  
...  
Keyword(s):  
Light Scattering ◽  
Polymer Solutions ◽  
Liquid Interface ◽  
Surface Light Scattering ◽  
Viscoelastic Polymer ◽  
Air Liquid Interface

Mapping Phase Diagrams of Polymer Solutions by a Combination of Microfluidic Solution Droplets and Laser Light-Scattering Detection

2014 ◽  
Vol 47 (7) ◽  
pp. 2496-2502 ◽  
Author(s):  
Yonggang Shangguan ◽  
Dameng Guo ◽  
Hui Feng ◽  
Yuan Li ◽  
Xiangjun Gong ◽  
...  
Keyword(s):  
Light Scattering ◽  
Phase Diagrams ◽  
Polymer Solutions ◽  
Laser Light ◽  
Laser Light Scattering ◽  
Light Scattering Detection

In-Situ Dual-Wavelength Ellipsometry and Light Scattering Monitoring of Si/Si1−xGex Heterostructures and Multiuantum Wells

1993 ◽  
Vol 324 ◽  
Author(s):  
C. Pickering ◽  
D.A.O. Hope ◽  
W.Y. Leong ◽  
D.J. Robbins ◽  
R. Greef
Keyword(s):  
Growth Rate ◽  
Light Scattering ◽  
Laser Light ◽  
Growth Period ◽  
Laser Light Scattering ◽  
Heterojunction Bipolar Transistor ◽  
Dual Wavelength ◽  
Multi Quantum Well ◽  
Refractive Index Data

AbstractIn-situ dual-wavelength ellipsometry and laser light scattering have been used to monitor growth of Si/Si1−x,Gex heterojunction bipolar transistor and multi-quantum well (MQW) structures. The growth rate of B-doped Si0 8Ge0.2 has been shown to be linear, but that of As-doped Si is non-linear, decreasing with time. Refractive index data have been obtained at the growth temperature for x = 0.15, 0.20, 0.25. Interface regions ∼ 6-20Å thickness have been detected at hetero-interfaces and during interrupted alloy growth. Period-to-period repeatability of MQW structures has been shown to be ±lML.

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