An evaluation of surface recombination current in fused impurity junction transistor

Physica ◽  
1954 ◽  
Vol 20 (7-12) ◽  
pp. 1029-1031 ◽  
Author(s):  
J. Laplume
Keyword(s):  
Surface Recombination ◽  
Junction Transistor ◽  
Recombination Current

1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-Resistance

2008 ◽  
Vol 600-603 ◽  
pp. 1151-1154 ◽  
Author(s):  
Hyung Seok Lee ◽  
Martin Domeij ◽  
Carl Mikael Zetterling ◽  
Reza Ghandi ◽  
Mikael Östling ◽  
...  
Keyword(s):  
Surface Passivation ◽  
Voltage Drop ◽  
Surface Recombination ◽  
High Gain ◽  
Current Gain ◽  
Bipolar Junction Transistor ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
Recombination Current ◽  
Reduced Surface

This paper reports a 4H-SiC bipolar junction transistor (BJT) with a breakdown voltage (BVCEO) of 1200 V, a maximum current gain (β) of 60 and the low on-resistance (Rsp_on)of 5.2 mΩcm2. The high gain is attributed to an improved surface passivation SiO2 layer which was grown in N2O ambient in a diffusion furnace. The SiC BJTs with passivation oxide grown in N2O ambient show less emitter size dependence than reference SiC BJTs, with conventional SiO2 passivation, due to a reduced surface recombination current. SiC BJT devices with an active area of 1.8 mm × 1.8 mm showed a current gain of 53 in pulsed mode and a forward voltage drop of VCE=2V at IC=15 A (JC=460 A/cm2).

Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current ◽  
Extrinsic Base

Improved Model for Ionization-Induced Surface Recombination Current in p-n-p BJTs

2020 ◽  
Vol 67 (8) ◽  
pp. 1826-1834 ◽  
Author(s):  
Lei Li ◽  
Xiao-Chi Chen ◽  
Yuan Jian ◽  
Ze-hong Li ◽  
Yu-zhou Wu ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Recombination Current ◽  
Improved Model

Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L266-L268 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Hiroshi Masuda ◽  
Masahiko Kawata ◽  
Katsuhiko Mitani ◽  
Chuushiro Kusano
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Recombination Current

GAIN DEGRADATION AND ENHANCED LOW-DOSE-RATE SENSITIVITY IN BIPOLAR JUNCTION TRANSISTORS

2004 ◽  
Vol 14 (02) ◽  
pp. 503-517 ◽  
Author(s):  
R. D. SCHRIMPF
Keyword(s):  
Dose Rate ◽  
Low Dose ◽  
Surface Recombination ◽  
Rate Sensitivity ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Base Current ◽  
Low Dose Rate ◽  
Two Factors ◽  
Recombination Current

The current gain of irradiated bipolar junction transistors decreases due to increased recombination current in the emitter-base depletion region and the neutral base. This recombination current depends on the interaction of two factors: (1) decreased minority-carrier lifetime at the Si / SiO 2 interface or in the bulk Si and (2) changes in surface potential caused by charge in the oxide. In npn transistors, these two factors both result in increased base current, while in pnp devices, positive charge in the oxide moderates the increase in base current due to surface recombination. In some technologies, the amount of degradation that occurs at a given total dose increases as the dose rate decreases. This enhanced low-dose-rate sensitivity results from space-charge effects produced by slowly transporting holes and protons in the oxide that covers the emitterbase junction.

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