A High Current Gain 4H-SiC BJT of Novel Epitaxial Passivation Structure

This paper proposes a novel high-gain 4H-SiC BJT structure with a p-type epitaxial layer on top of the extrinsic base layer. The current gain of the novel structure is improved by 140% compared with the conventional one by the simulator tool with the number of reasonable interface traps, which could be ascribed to the epitaxial layer to reduce the surface recombination in the extrinsic base. The process to fabricate this structure is also proposed in the paper.

Improvement of Current Gain with Etched Extrinsic Base Regions of Triple Ion Implanted SiC BJT

In this paper, we demonstrate triple ion implanted 4H-SiC bipolar junction transistor (BJT) with etched extrinsic base regions. At the result of etching extrinsic base regions by mask of contact metals, maximum common emitter current gain was improved from 0.7 to 1.6.

High Current Gain Triple Ion Implanted 4H-SiC BJT

We investigated triple ion implanted 4H-SiC BJT with etched extrinsic base regions. To remove the defects induced by ion implantation between emitter and base regions, the characteristics of triple ion implanted 4H-SiC BJT were significantly improved. Maximum common current gain was improved from 1.7 to 7.5.