Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

Surface Recombination ◽

Bipolar Transistors ◽

Base Surface ◽

Recombination Current ◽

Ideality factor of extrinsic base surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors

Electronics Letters ◽

10.1049/el:19920237 ◽

1992 ◽

Vol 28 (4) ◽

pp. 379 ◽

Cited By ~ 3

Author(s):

W. Liu

Keyword(s):

Ideality Factor ◽

Surface Recombination ◽

Bipolar Transistors ◽

Base Surface ◽

Recombination Current ◽

Extrinsic Base Surface Recombination Current in GaInP/GaAs Heterojunction Bipolar Transistors with Near-Unity Ideality Factor

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l713 ◽

1993 ◽

Vol 32 (Part 2, No. 5B) ◽

pp. L713-L715 ◽

Cited By ~ 8

Author(s):

William Liu

Keyword(s):

Ideality Factor ◽

Surface Recombination ◽

Bipolar Transistors ◽

Base Surface ◽

Recombination Current ◽

Experimental evaluation of separate contributions to ideality factor for the base surface recombination current in heterojunction bipolar transistors

Materials Science and Engineering B ◽

10.1016/0921-5107(94)90055-8 ◽

1994 ◽

Vol 28 (1-3) ◽

pp. 238-241

Author(s):

S.R.D. Kalingamudali ◽

A.C. Wismayer ◽

R.C. Woods

Keyword(s):

Ideality Factor ◽

Experimental Evaluation ◽

Surface Recombination ◽

Bipolar Transistors ◽

Base Surface ◽

Two-dimensional analysis of surface recombination at the extrinsic base surface under various conditions in heterojunction bipolar transistors

Solid-State Electronics ◽

10.1016/0038-1101(94)00144-5 ◽

1995 ◽

Vol 38 (3) ◽

pp. 633-639 ◽

Cited By ~ 3

Author(s):

Chang-Woo Kim ◽

Norio Goto ◽

Kazuhiko Honjo

Keyword(s):

Dimensional Analysis ◽

Surface Recombination ◽

Bipolar Transistors ◽

Two Dimensional ◽

Base Surface ◽

Emitter composition and geometry related surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors

Journal of Applied Physics ◽

10.1063/1.351941 ◽

1992 ◽

Vol 72 (11) ◽

pp. 5483-5488 ◽

Cited By ~ 6

Author(s):

Chung‐Cheng Wu ◽

Si‐Chen Lee

Keyword(s):

Surface Recombination ◽

Bipolar Transistors ◽

Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer

IEEE Electron Device Letters ◽

10.1109/55.43148 ◽

1989 ◽

Vol 10 (12) ◽

pp. 585-587 ◽

Cited By ~ 22

Author(s):

E. Tokumitsu ◽

A.G. Dentai ◽

C.H. Joyner

Keyword(s):

Surface Recombination ◽

Bipolar Transistors ◽

Passivation Layer ◽

Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.l266 ◽

1991 ◽

Vol 30 (Part 2, No. 2B) ◽

pp. L266-L268 ◽

Cited By ~ 10

Author(s):

Kazuhiro Mochizuki ◽

Hiroshi Masuda ◽

Masahiko Kawata ◽

Katsuhiko Mitani ◽

Chuushiro Kusano

Keyword(s):

Ideality Factor ◽

Surface Recombination ◽

Bipolar Transistors ◽

Extrinsic base surface passivation in GaInP/GaAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.215205 ◽

1993 ◽

Vol 14 (6) ◽

pp. 301-303 ◽

Cited By ~ 32

Author(s):

W. Liu ◽

E. Beam ◽

T. Henderson ◽

S.-K. Fan

Keyword(s):

Surface Passivation ◽

Bipolar Transistors ◽

Base Surface ◽

Surface recombination current of AlGaAs/GaAs heterojunction bipolar transistors

Solid-State Electronics ◽

10.1016/0038-1101(92)90282-h ◽

1992 ◽

Vol 35 (6) ◽

pp. 805-813 ◽

Cited By ~ 10

Author(s):

J.L. Liou ◽

J.S. Yuan

Keyword(s):

Surface Recombination ◽

Bipolar Transistors ◽

Diode ideality factor for surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.168749 ◽

1992 ◽

Vol 39 (12) ◽

pp. 2726-2732 ◽

Cited By ~ 81

Author(s):

W. Liu ◽

J.S. Harris

Keyword(s):

Ideality Factor ◽

Surface Recombination ◽

Bipolar Transistors ◽

Diode Ideality Factor ◽