Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer

1989 ◽  
Vol 10 (12) ◽  
pp. 585-587 ◽  
Author(s):  
E. Tokumitsu ◽  
A.G. Dentai ◽  
C.H. Joyner
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Passivation Layer ◽  
Recombination Current

Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1500-L1502 ◽  
Author(s):  
Hiroshi Ito ◽  
Osaake Nakajima ◽  
Koichi Nagata ◽  
Takashi Makimura ◽  
Tadao Ishibashi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Base Surface ◽  
Recombination Current ◽  
Extrinsic Base

Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L266-L268 ◽  
Author(s):  
Kazuhiro Mochizuki ◽  
Hiroshi Masuda ◽  
Masahiko Kawata ◽  
Katsuhiko Mitani ◽  
Chuushiro Kusano
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Recombination Current

Surface recombination current and emitter compositional grading inNpnandPnpGaAs/AlxGa1−xAs heterojunction bipolar transistors

1989 ◽  
Vol 54 (7) ◽  
pp. 641-643 ◽  
Author(s):  
T. J. de Lyon ◽  
H. C. Casey ◽  
P. M. Enquist ◽  
J. A. Hutchby ◽  
A. J. SpringThorpe
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Surface Recombination ◽  
Bipolar Transistors ◽  
Recombination Current ◽  
Compositional Grading
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