Low temperature MBE grown AlInAs: Investigation of current voltage and low frequency noise behaviour of schottky diodes

1997 ◽  
Vol 41 (6) ◽  
pp. 857-864 ◽  
Author(s):  
C Meva'a ◽  
X Letartre ◽  
P Rojo-Romeo ◽  
P Viktorovitch
2018 ◽  
Vol 924 ◽  
pp. 605-608
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Michael E. Levinshtein ◽  
S.L. Rumyantsev ◽  
John W. Palmour

Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.


2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (12) ◽  
pp. 6708-6716 ◽  
Author(s):  
Gabriele Calabrese ◽  
Lorenzo Pimpolari ◽  
Silvia Conti ◽  
Fabrice Mavier ◽  
Subimal Majee ◽  
...  

Inkjet printed graphene is in-depth investigated by means of Hall mobility measurements, low-temperature magnetoresistance analysis, and low frequency noise characterization.


2013 ◽  
Vol 90 ◽  
pp. 160-165 ◽  
Author(s):  
H. Achour ◽  
R. Talmat ◽  
B. Cretu ◽  
J.-M. Routoure ◽  
A. Benfdila ◽  
...  

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