Low-frequency noise in GaAs and InP Schottky diodes

Author(s):  
K.F. Sato ◽  
C.W. Chan ◽  
K. Najita ◽  
M.P. DeLisio ◽  
Y.H. Chung ◽  
...  
2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  

2021 ◽  
pp. 1-1
Author(s):  
Wonjun Shin ◽  
Dongseok Kwon ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  

1997 ◽  
Vol 6 (10) ◽  
pp. 1494-1496 ◽  
Author(s):  
L. Anghel ◽  
T. Ouisse ◽  
T. Billon ◽  
P. Lassagne ◽  
C. Jaussaud

2005 ◽  
Vol 87 (16) ◽  
pp. 163109 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
D. H. Tassis ◽  
C. A. Dimitriadis ◽  
G. Kamarinos ◽  
...  

2018 ◽  
Vol 924 ◽  
pp. 605-608
Author(s):  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski ◽  
Michael E. Levinshtein ◽  
S.L. Rumyantsev ◽  
John W. Palmour

Electron irradiation of high voltage Ni/4H-SiC Schottky diodes with the dose Φ=(0.2-7)×1016cm-2 led to increase in the base resistance, appearance of slow relaxation processes at extremely small currents, and increase of the low frequency noise. On exponential part of the current-voltage characteristics and on linear part of current-voltage characteristics in non-irradiated samples, low frequency noise always has the form of the 1/f noise. On linear part of the current-voltage characteristics in irradiated diodes the generation recombination (GR) noise predominates. Temperature dependences of the base resistivity and character of GR noise indicate that mainly Z1/2 center contributes to the change in the parameters of irradiated samples. Capture cross section of this level, obtained from noise measurements, is within the range (8×10-16-2×10-15) cm2 and only weakly depends on temperature.


2016 ◽  
Vol 109 (3) ◽  
pp. 033502 ◽  
Author(s):  
G. Cywiński ◽  
K. Szkudlarek ◽  
P. Kruszewski ◽  
I. Yahniuk ◽  
S. Yatsunenko ◽  
...  

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