A new charge pumping model considering bulk trap states in polysilicon thin film transistor

1998 ◽  
Vol 42 (11) ◽  
pp. 1897-1903 ◽  
Author(s):  
Kee-Jong Kim ◽  
Won-Kyu Park ◽  
Seong-Gyun Kim ◽  
Keong-Mun Lim ◽  
In-Gon Lim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Trap States ◽  
Charge Pumping

Occupation dynamics of trap states in ana‐Si:H thin‐film transistor

1991 ◽  
Vol 69 (2) ◽  
pp. 1041-1046 ◽  
Author(s):  
J. N. Bullock ◽  
C. H. Wu
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Trap States

Trap States of the Oxide Thin Film Transistor

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MA12 ◽  
Author(s):  
Kyeong Min Yu ◽  
Jin Tae Yuh ◽  
Sang Hee Ko Park ◽  
Min Ki Ryu ◽  
Eui Jung Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Trap States

A Model for the Frequency Dependence of Charge Pumping Current in Polycrystalline Silicon Thin Film Transistor

1995 ◽  
Vol 378 ◽  
Author(s):  
Ga-Won Lee ◽  
Jung-Yeal Lee ◽  
Deuk-Sung Choi ◽  
Sung-Hoi Hur ◽  
Choong-Ki Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Frequency Dependence ◽  
Polycrystalline Silicon ◽  
Thin Film Transistor ◽  
Pulse Frequency ◽  
Silicon Thin Film ◽  
Charge Pumping ◽  
Gate Pulse ◽  
Substrate Resistance ◽  
Distinctive Difference

AbstractMaking a comparative study between MOSFET and polycrystalline silicon thin film transistor(poly-Si TFT) in applying the charge pumping method(CPM), the most distinctive difference was found in the relation of the charge pumping current(Icp) versus the gate pulse frequency. According to the conventional theory, Icp increases linearly with the gate pulse frequency. In poly-Si TFT, however, Icp shows complicated dependence on frequency. We modeled the frequency dependence of Icp in poly-Si TFT by considering the resistance of active poly-Si film. According to this model we can extract the parameters such as grain boundary trap density, substrate resistance, and capture cross section.

Effect of transient behavior on off-state current in poly-Si junctionless nanowire thin-film transistor

2020 ◽  
Vol 59 (12) ◽  
pp. 126503
Author(s):  
Tsung-Kuei Kang ◽  
Che-Fu Hsu ◽  
Han-Wen Liu ◽  
Feng-Tso Chien ◽  
Cheng-Li Lin
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Transient Behavior
Sign in / Sign up

Export Citation Format

Share Document