Formation of size controlled Ge nanocrystals in SiO 2 matrix by ion implantation and annealing

2000 ◽  
Vol 369 (1-2) ◽  
pp. 100-103 ◽  
Author(s):  
M Yamamoto ◽  
T Koshikawa ◽  
T Yasue ◽  
H Harima ◽  
K Kajiyama
Keyword(s):  
Ion Implantation ◽  
Size Controlled ◽  
Ge Nanocrystals

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals

scholarly journals Oriented Si and Ge nanocrystals formed in Al{sub 2}O{sub 3} by ion implantation and annealing

1993 ◽  
Author(s):  
C.W. White ◽  
J.D. Budai ◽  
S.P. Withrow ◽  
S.J. Pennycook ◽  
D.S. Zhou ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ge Nanocrystals

Correlation of Size and Photoluminescence for Ge Nanocrystals in SiO2 Matrices

1994 ◽  
Vol 358 ◽  
Author(s):  
C.M Yang ◽  
K.V. Shcheglov ◽  
M.L. Brongersma ◽  
A Polman ◽  
H.A. Atwater
Keyword(s):  
Electron Microscopy ◽  
Ion Implantation ◽  
Room Temperature ◽  
Size Distributions ◽  
Photoluminescence Spectra ◽  
Size Dependent ◽  
Electron Microscopy Data ◽  
Exciton Recombination ◽  
Microscopy Data ◽  
Ge Nanocrystals

ABSTRACTSynthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model[l] to generate calculated photoluminescence spectra, which were compared with experimental spectra.

scholarly journals Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing

2006 ◽  
Vol 88 (7) ◽  
pp. 071916 ◽  
Author(s):  
C. J. Park ◽  
K. H. Cho ◽  
W.-C. Yang ◽  
H. Y. Cho ◽  
Suk-Ho Choi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hysteresis Loops ◽  
Sio2 Films ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Large Capacitance ◽  
Ge Nanocrystals

scholarly journals Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

2011 ◽  
Vol 6 (1) ◽  
Author(s):  
Bhabani Shankar Sahu ◽  
Florence Gloux ◽  
Abdelilah Slaoui ◽  
Marzia Carrada ◽  
Dominique Muller ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Implantation Energy ◽  
Ge Nanocrystals

Fabrication of Ge nanocrystals in SiO2 films by ion implantation: control of size and position

2002 ◽  
Vol 299-302 ◽  
pp. 1079-1083 ◽  
Author(s):  
Kaori Masuda ◽  
Masahiro Yamamoto ◽  
Masatoshi Kanaya ◽  
Yoshihiko Kanemitsu
Keyword(s):  
Ion Implantation ◽  
Sio2 Films ◽  
Ge Nanocrystals

Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

2014 ◽  
Vol 115 (20) ◽  
pp. 204310 ◽  
Author(s):  
R. S. Cai ◽  
Y. Q. Wang ◽  
L. Shang ◽  
X. H. Liu ◽  
Y. J. Zhang ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ge Nanocrystals
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