Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

AbstractAn Mo gate work function control technique which uses annealing or N+ ion implantation has been reported by Ranade et al. We have fabricated Mo-gate MOS diodes, based on their report, with 5-20 nm SiO2 and found that the gate leakage current was increased as the N+ implantation dose and implantation energy were increased. Although a work function shift was observed in the C-V characteristics, a hump caused by high-density interface states was found for high-dose specimens. Nevertheless, a work function shift larger than -1V was achieved. However, nitrogen concentration at the Si surface was about 1x1020 cm-3 for the specimen with a large work function shift.

Download Full-text

Oriented Si and Ge nanocrystals formed in Al{sub 2}O{sub 3} by ion implantation and annealing

10.2172/10116770 ◽

1993 ◽

Author(s):

C.W. White ◽

J.D. Budai ◽

S.P. Withrow ◽

S.J. Pennycook ◽

D.S. Zhou ◽

...

Keyword(s):

Ion Implantation ◽

Ge Nanocrystals

Download Full-text

Design of Low Gain Avalanche Detectors (LGAD) with 400 keV ion implantation energy for multiplication layer fabrication

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2020.164558 ◽

2020 ◽

Vol 984 ◽

pp. 164558

Author(s):

K. Wu ◽

M. Zhao ◽

T. Yang ◽

João Guimarães da Costa ◽

Z. Liang ◽

...

Keyword(s):

Ion Implantation ◽

Implantation Energy

Download Full-text

Effects of ion implantation energy of Er on defects and Er-gettering in silicon

Ion Beam Modification of Materials ◽

10.1016/b978-0-444-82334-2.50190-8 ◽

1996 ◽

pp. 955-959

Author(s):

A. Majima ◽

S. Uekusa ◽

K. Shimazu ◽

H. Takano

Keyword(s):

Ion Implantation ◽

Implantation Energy

Download Full-text

Synthesis of Ge Nanocrystals Grown by Ion Implantation and Subsequent Annealing

2006 International Caribbean Conference on Devices, Circuits and Systems ◽

10.1109/iccdcs.2006.250852 ◽

2006 ◽

Author(s):

S.N.M. Mestanza ◽

J. Swart ◽

I. Doi ◽

N.C. Frateschi

Keyword(s):

Ion Implantation ◽

Subsequent Annealing ◽

Ge Nanocrystals

Download Full-text

Optical Activation of Ion Implanted Rare-Earths

MRS Proceedings ◽

10.1557/proc-301-181 ◽

1993 ◽

Vol 301 ◽

Cited By ~ 51

Author(s):

P.N. Favennec ◽

H. L'haridon ◽

D. Moutonnet ◽

M. Salvi ◽

M. Gauneau

Keyword(s):

Rare Earth ◽

Ion Implantation ◽

Rare Earth Elements ◽

Rare Earths ◽

Annealing Temperature ◽

Implantation Energy ◽

Optical Activation ◽

Energy Dose ◽

The Rare Earth ◽

Ion Implanted

ABSTRACTA review of the main results concerning the ion implantation of the rare-earth elements is given.To obtain the best optical activation of rare-earths, we attempt to optimize the implantation (energy, dose) and annealing (temperature, duration) conditions. The studied materials are Si, II-VI binaries (ZnTe, CdS), III-V binaries (GaAs, InP), III-V ternaries (GaAlAs, GaInAs) and III-V quaternaries (GaInAsP).

Download Full-text

Correlation of Size and Photoluminescence for Ge Nanocrystals in SiO2 Matrices

MRS Proceedings ◽

10.1557/proc-358-181 ◽

1994 ◽

Vol 358 ◽

Cited By ~ 7

Author(s):

C.M Yang ◽

K.V. Shcheglov ◽

M.L. Brongersma ◽

A Polman ◽

H.A. Atwater

Keyword(s):

Electron Microscopy ◽

Ion Implantation ◽

Room Temperature ◽

Size Distributions ◽

Photoluminescence Spectra ◽

Size Dependent ◽

Electron Microscopy Data ◽

Exciton Recombination ◽

Microscopy Data ◽

Ge Nanocrystals

ABSTRACTSynthesis and size-dependent photoluminescence has been performed for Ge nanocrystals in SiO2 matrices with average diameters between 2 nm and 9 nm, formed by room temperature ion implantation into SiO2 followed by precipitation during vacuum thermal anneals. Nanocrystal size distributions obtained from electron microscopy data were used in conjunction with a quantum-confined exciton recombination model[l] to generate calculated photoluminescence spectra, which were compared with experimental spectra.

Download Full-text

Effects of Low Energy Carbon Ion Implantation on the Material Properties of InAs/GaAs Quantum Dots with Variation in Capping Layer

MRS Proceedings ◽

10.1557/opl.2015.215 ◽

2015 ◽

Vol 1743 ◽

Author(s):

S. Upadhyay ◽

A Mandal ◽

A. Basu ◽

P. Singh ◽

S. Chakrabarti

Keyword(s):

Quantum Dots ◽

Ion Implantation ◽

Blue Shift ◽

Low Energy ◽

Stress Generation ◽

Carbon Ions ◽

Implantation Energy ◽

Carbon Ion ◽

Capping Layer ◽

Pl Intensity

ABSTRACTUnder controlled irradiation of low energy carbon ions, photoluminescence (PL) study of InAs quantum dots prepared with different capping structures (GaAs and InAlGaAs) was carried out. Samples were investigated by varying implantation energy from 15 keV to 50 keV with fluence ranging between 3 × 1011ions/cm2 and 8 × 1011 ions/cm2. For fixed fluence of 4 × 1011ions/cm2, low temperature PL showed enhancement in a certain range of energy, along with a blue shift in the PL peak wavelength. In contrast, with varying fluence at fixed implantation energy of 50 keV, PL enhancement was not significant, rather a drop in PL intensity was noted at higher fluence from 5 × 1011 to 8 × 1011 ions/cm2. Moreover, carbon ion implantation caused a blue shift in the PL emission peak for both energy and fluence variations. PL intensity suppression was possibly caused by the formation of non-radiative recombination centers (NRCs) near the capping layer, while the corresponding blue shift might be attributed to stress generation in the capping layer due to implantation. As-grown and implanted InAlGaAs capped samples did not exhibit much variation in full width at half maxima of PL spectra; however, significant variation was observed for the GaAs capped sample. These results validate that InAlGaAs-capped QDs are more immune to ion implantation.

Download Full-text