scholarly journals Large capacitance-voltage hysteresis loops in SiO2 films containing Ge nanocrystals produced by ion implantation and annealing

2006 ◽  
Vol 88 (7) ◽  
pp. 071916 ◽  
Author(s):  
C. J. Park ◽  
K. H. Cho ◽  
W.-C. Yang ◽  
H. Y. Cho ◽  
Suk-Ho Choi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Hysteresis Loops ◽  
Sio2 Films ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Large Capacitance ◽  
Ge Nanocrystals

Fabrication of Ge nanocrystals in SiO2 films by ion implantation: control of size and position

2002 ◽  
Vol 299-302 ◽  
pp. 1079-1083 ◽  
Author(s):  
Kaori Masuda ◽  
Masahiro Yamamoto ◽  
Masatoshi Kanaya ◽  
Yoshihiko Kanemitsu
Keyword(s):  
Ion Implantation ◽  
Sio2 Films ◽  
Ge Nanocrystals

Synthesis of Ge nanocrystals in thermal SiO2 films by Ge+ ion implantation

1998 ◽  
Vol 323 (1-2) ◽  
pp. 68-71 ◽  
Author(s):  
Jia-Yu Zhang ◽  
Xi-Mao Bao ◽  
Yong-Hong Ye
Keyword(s):  
Ion Implantation ◽  
Sio2 Films ◽  
Ge Nanocrystals

Inducing Layer Dependence of BiFeO3 Based Multilayer Capacitors

2009 ◽  
Vol 60-61 ◽  
pp. 256-259 ◽  
Author(s):  
Ya Feng Luo ◽  
Dan Xie ◽  
Yong Yuan Zang ◽  
Rui Song ◽  
Tian Ling Ren ◽  
...  
Keyword(s):  
Thin Films ◽  
Applied Voltage ◽  
Room Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Sol Gel Process ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Multilayer Capacitors

Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.

scholarly journals Structural Dependent Eu3+ Luminescence, Photoelectric and Hysteresis Effects in Porous Strontium Titanate

Materials ◽  
2020 ◽  
Vol 13 (24) ◽  
pp. 5767
Author(s):  
Maryia Rudenko ◽  
Nikolai Gaponenko ◽  
Vladimir Litvinov ◽  
Alexander Ermachikhin ◽  
Eugene Chubenko ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
X Ray ◽  
Capacitance Voltage ◽  
Voltage Hysteresis ◽  
Secondary Ion

Eu3+ doped porous nanostructured SrTiO3 films and powder fabricated by sol-gel route without using any precursor template are characterized by different morphology and phase composition. The films and the power show red and yellow luminescence with the most intensive photoluminescence (PL) bands at 612 nm and 588 nm, respectively. Raman, secondary ion mass spectrometry (SIMS), and X-ray diffraction (XRD) analysis of undoped nanostructured porous SrTiO3 films showed the presence of TiO2, SrO, and SrTiO3 phases and their components. The undoped porous SrTiO3 films are photosensitive and demonstrate resistive switching. The capacitance-voltage hysteresis loops with the width of about 6 V in the frequency range of 2 kHz—2 MHz were observed.

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals

scholarly journals Oriented Si and Ge nanocrystals formed in Al{sub 2}O{sub 3} by ion implantation and annealing

1993 ◽  
Author(s):  
C.W. White ◽  
J.D. Budai ◽  
S.P. Withrow ◽  
S.J. Pennycook ◽  
D.S. Zhou ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ge Nanocrystals

Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

2006 ◽  
Vol 50 (6) ◽  
pp. 1097-1104 ◽  
Author(s):  
Darrell Niemann ◽  
Norman Gunther ◽  
Charles Kwong ◽  
Mark Barycza ◽  
Mahmud Rahman
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Sio2 Thin Film ◽  
Capacitance Voltage ◽  
Organic Semiconductor Devices ◽  
Voltage Hysteresis
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