Selection of dielectrics for alternating-current thin-film electroluminescent device

1999 ◽  
Vol 347 (1-2) ◽  
pp. 1-13 ◽  
Author(s):  
Alex N. Krasnov
Keyword(s):  
Thin Film ◽  
Alternating Current ◽  
Electroluminescent Device ◽  
Selection Of

Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics

2001 ◽  
Vol 670 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Peter Fejes ◽  
Rich Gregory ◽  
Shifeng Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal Oxides ◽  
Gate Dielectrics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Compositional Properties ◽  
Sharp Interfaces ◽  
Selection Of

ABSTRACTRapid shrinking in device dimensions calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This paper will report recent results on structural and compositional properties of thin film SrTiO3 and transition metal oxides (ZrO2and HfO2).

Characteristics of a SrS:Ce Thin-Film Electroluminescent Device Prepared by Post-Annealing in H2S

2000 ◽  
Vol 39 (Part 1, No. 7A) ◽  
pp. 4041-4044
Author(s):  
Takashi Morishita ◽  
Hiroyoshi Matsuyama ◽  
Masahiro Matsui ◽  
Masataka Wakihara
Keyword(s):  
Thin Film ◽  
Electroluminescent Device ◽  
Post Annealing

Strong Ultraviolet-Emitting ZnF2:Gd Thin Film Electroluminescent Device

1991 ◽  
Vol 30 (Part 2, No. 10B) ◽  
pp. L1815-L1816 ◽  
Author(s):  
Noboru Miura ◽  
Takashi Sasaki ◽  
Hironaga Matsumoto ◽  
Ryotaro Nakano
Keyword(s):  
Thin Film ◽  
Electroluminescent Device

Alternating current characterization of nano-Pt(II) octaethylporphyrin (PtOEP) thin film as a new organic semiconductor

2016 ◽  
Vol 25 (6) ◽  
pp. 067201 ◽  
Author(s):  
M Dongol ◽  
M M El-Nahass ◽  
A El-Denglawey ◽  
A A Abuelwafa ◽  
T Soga
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Alternating Current

Silicon phthalocyanines as N-type semiconductors in organic thin film transistors

2018 ◽  
Vol 6 (20) ◽  
pp. 5482-5488 ◽  
Author(s):  
Owen A. Melville ◽  
Trevor M. Grant ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Processing Conditions ◽  
Organic Thin Film ◽  
Careful Selection ◽  
Silicon Phthalocyanines ◽  
Selection Of

The first example of Silicon phthalocyanines (SiPcs) in organic thin-film transistors (OTFTs). This study outlines the need for careful selection of processing conditions for optimized performance.

Sign in / Sign up

Export Citation Format

Share Document