Transient capacitance spectroscopy of defect levels in CIGS devices

Thin Solid Films ◽

10.1016/s0040-6090(99)00822-6 ◽

2000 ◽

Vol 361-362 ◽

pp. 371-377 ◽

Author(s):

M. Igalson ◽

P. Zabierowski

Keyword(s):

Transient Capacitance ◽

Capacitance Spectroscopy ◽

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Transient capacitance spectroscopy on InAs/sub x/P/sub 1-x//InP multiquantum well solar cells structures

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference 2005 PVSC-05 ◽

10.1109/pvsc.2005.1488089 ◽

2005 ◽

Author(s):

A. Khan ◽

S. Marupaduga ◽

A. Freundlich ◽

J. Gou ◽

H. Ko ◽

...

Keyword(s):

Solar Cells ◽

Transient Capacitance ◽

Capacitance Spectroscopy ◽

Multiquantum Well

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Deep level transient capacitance spectroscopy of defects at native oxide-GaAs interfaces of 〈1̄1̄1̄〉 and 〈100〉 orientations

Surface Science ◽

10.1016/0039-6028(84)90541-7 ◽

1984 ◽

Vol 143 (2-3) ◽

pp. L417-L420 ◽

Author(s):

A.M. Narsale ◽

B.M. Arora

Keyword(s):

Native Oxide ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Deep level transient capacitance spectroscopy of defects at native oxide-GaAs interfaces of 〈〉 and 〈100〉 orientations

Surface Science Letters ◽

10.1016/0167-2584(84)90634-0 ◽

1984 ◽

Vol 143 (2-3) ◽

pp. L417-L420

Author(s):

A.M. Narsale ◽

B.M. Arora

Keyword(s):

Native Oxide ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Transient Capacitance Spectroscopy of Copper-Ion-Drifted Methylsilsesquiazane-Methylsilsesquioxane Interlayer Dielectrics

Japanese Journal of Applied Physics ◽

10.1143/jjap.43.8026 ◽

2004 ◽

Vol 43 (12) ◽

pp. 8026-8027 ◽

Author(s):

Takenobu Yoshino ◽

Nobuhiro Hata ◽

Takamaro Kikkawa

Keyword(s):

Interlayer Dielectrics ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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MOS interface-state density measurements using transient capacitance spectroscopy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1980.20257 ◽

1980 ◽

Vol 27 (12) ◽

pp. 2231-2239 ◽

Author(s):

K.L. Wang

Keyword(s):

Interface State ◽

State Density ◽

Interface State Density ◽

Density Measurements ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Transient capacitance spectroscopy in heavily compensated materials

Physica B+C ◽

10.1016/0378-4363(85)90615-1 ◽

1985 ◽

Vol 129 (1-3) ◽

pp. 422-425 ◽

Author(s):

D. Stievenard ◽

M. Lannoo ◽

J.C. Bourgoin

Keyword(s):

Transient Capacitance ◽

Capacitance Spectroscopy

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Study of GaAs–oxide interface by transient capacitance spectroscopy: Discrete energy interface states

Journal of Vacuum Science and Technology ◽

10.1116/1.570587 ◽

1980 ◽

Vol 17 (5) ◽

pp. 1041-1044 ◽

Author(s):

E. Kamieniecki ◽

T. E. Kazior ◽

J. Lagowski ◽

H. C. Gatos

Keyword(s):

Interface States ◽

Oxide Interface ◽

Discrete Energy ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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Detection of traps in high conductivity ZnSe by optical transient capacitance spectroscopy

Journal of Applied Physics ◽

10.1063/1.332516 ◽

1983 ◽

Vol 54 (7) ◽

pp. 4205-4208 ◽

Author(s):

K. A. Christianson ◽

B. W. Wessels

Keyword(s):

High Conductivity ◽

Transient Capacitance ◽

Capacitance Spectroscopy ◽

Optical Transient

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Direct determination of the electron-tunneling escape time from a GaAs/AlxGa1−xAs quantum well by transient-capacitance spectroscopy

Physical Review B ◽

10.1103/physrevb.44.3157 ◽

1991 ◽

Vol 44 (7) ◽

pp. 3157-3161 ◽

Author(s):

E. Martinet ◽

E. Rosencher ◽

F. Chevoir ◽

J. Nagle ◽

P. Bois

Keyword(s):

Quantum Well ◽

Electron Tunneling ◽

Direct Determination ◽

Escape Time ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopy

Applied Physics ◽

10.1007/bf00886176 ◽

1980 ◽

Vol 21 (3) ◽

pp. 257-261 ◽

Author(s):

T. Ishida ◽

K. Maeda ◽

S. Takeuchi

Keyword(s):

Deep Levels ◽

Transient Capacitance ◽

Capacitance Spectroscopy

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