Silicon nitride layers on gallium arsenide by low-energy ion beam sputtering

Vacuum ◽

10.1016/s0042-207x(80)80541-0 ◽

1980 ◽

Vol 30 (8-9) ◽

pp. 346

Keyword(s):

Gallium Arsenide ◽

Silicon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

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Silicon nitride layers on gallium arsenide by low‐energy ion beam sputtering

Journal of Vacuum Science and Technology ◽

10.1116/1.569904 ◽

1979 ◽

Vol 16 (2) ◽

pp. 189-192 ◽

Author(s):

L. E. Bradley ◽

J. R. Sites

Keyword(s):

Gallium Arsenide ◽

Silicon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

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Semi-quantitative in situ Auger analysis of silicon nitride layers deposited by reactive ion beam sputtering

Surface Science ◽

10.1016/0039-6028(85)90968-9 ◽

1985 ◽

Vol 162 (1-3) ◽

pp. 695-701 ◽

Author(s):

A. Bosseboeuf ◽

D. Bouchier

Keyword(s):

Silicon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Auger Analysis ◽

Beam Sputtering ◽

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Semi-quantitative in SITU Auger analysis of silicon nitride layers deposited by reactive ion beam sputtering

Surface Science Letters ◽

10.1016/0167-2584(85)90325-1 ◽

1985 ◽

Vol 162 (1-3) ◽

pp. A612

Author(s):

A. Bosseboeuf ◽

D. Bouchier

Keyword(s):

Silicon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Auger Analysis ◽

Beam Sputtering ◽

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High fluence effect on Si ripple morphology developed by low energy ion beam sputtering

10.1063/1.4810246 ◽

2013 ◽

Author(s):

Debasree Chowdhury ◽

Debabrata Ghose

Keyword(s):

Ion Beam ◽

High Fluence ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Topographical changes induced by low energy ion beam sputtering at oblique incidence

Radiation Effects ◽

10.1080/00337578308228185 ◽

1983 ◽

Vol 77 (3-4) ◽

pp. 177-193 ◽

Author(s):

Ren Cong-xin ◽

Chen Guo-Ming ◽

Fu Xtn-Ding ◽

Yang Jie ◽

Fang Hong-Li ◽

...

Keyword(s):

Oblique Incidence ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering

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A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar/sup +/ ion beam sputtering

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials ◽

10.1109/iciprm.1991.147349 ◽

2002 ◽

Author(s):

G. Stareev ◽

A. Umbach ◽

F. Fidorra ◽

H. Roehle

Keyword(s):

Ohmic Contacts ◽

Ion Beam ◽

Fabrication Technique ◽

Ion Beam Sputtering ◽

Low Resistance ◽

Beam Sputtering

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Properties of secondary particles for ion beam sputtering of silicon using low-energy oxygen ions

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000037 ◽

2020 ◽

Vol 38 (3) ◽

pp. 033011 ◽

Author(s):

Kyunghwan Oh ◽

Dmitry Kalanov ◽

André Anders ◽

Carsten Bundesmann

Keyword(s):

Ion Beam ◽

Ion Beam Sputtering ◽

Oxygen Ions ◽

Secondary Particles ◽

Beam Sputtering

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Effects of bombardment on optical properties during the deposition of silicon nitride by reactive ion-beam sputtering

Applied Optics ◽

10.1364/ao.35.003620 ◽

1996 ◽

Vol 35 (19) ◽

pp. 3620 ◽

Author(s):

M. F. Lambrinos ◽

R. Valizadeh ◽

J. S. Colligon

Keyword(s):

Optical Properties ◽

Silicon Nitride ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Beam Sputtering

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A reliable fabrication technique for very low resistance ohmic contacts top-InGaAs using low energy Ar+ ion beam sputtering

Journal of Electronic Materials ◽

10.1007/bf03030207 ◽

1991 ◽

Vol 20 (12) ◽

pp. 1059-1063 ◽

Author(s):

G. Stareev ◽

A. Umbach

Keyword(s):

Ohmic Contacts ◽

Ion Beam ◽

Fabrication Technique ◽

Ion Beam Sputtering ◽

Low Resistance ◽

Beam Sputtering

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Surface morphology of molybdenum silicide films upon low-energy ion beam sputtering

Journal of Physics Condensed Matter ◽

10.1088/1361-648x/aac4f6 ◽

2018 ◽

Vol 30 (26) ◽

pp. 264003 ◽

Author(s):

R Gago ◽

M Jaafar ◽

F J Palomares

Keyword(s):

Surface Morphology ◽

Ion Beam ◽

Molybdenum Silicide ◽

Ion Beam Sputtering ◽

Beam Sputtering

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