AbstractThe integration of near-field scanning optical microscopy (NSOM) with the imaging and localized excitation capabilities of electrons in a scanning electron microscope (SEM) offers new capabilities for the observation of highly resolved transport phenomena in the areas of electronic and optical materials characterization, semiconductor nanodevices, plasmonics and integrated nanophotonics. While combined capabilities for atomic force microscopy (AFM) and SEM are of obvious interest to provide localized surface topography in concert with the ease and large spatial dynamic range of SEM and dual beam imaging (e.g., in-situ AFM following focused ion beam modification), integration with near-field optical imaging capability can also provide access to localized transport phenomena beyond the reach of far-field systems. In particular, the flexibility that is achieved with the capability for independent, high resolution placement of an electron source, providing localized excitation in the form of free carriers, photons or plasmons, with scanning of the optical collecting tip allows for unique types of “dual-probe” experiments that directly image energy transfer. We review integrated near-field and electron optics systems to date, highlight applications in a variety of fields and suggest future directions.
Fabrication of probes for scanning near-field optical microscopy using focused ion beam