Investigation of SOI photonic crystals fabricated by both electron-beam lithography and nanoimprint lithography

2004 ◽  
Vol 73-74 ◽  
pp. 405-411 ◽  
Author(s):  
M BELOTTI
2016 ◽  
Vol 11 (1) ◽  
pp. 88-93
Author(s):  
Dmitriy Utkin ◽  
Aleksandr Shklyaev ◽  
Fedor Dultsev ◽  
Aleksandr Latyshev

Specific aspects of finely focused electron beam interaction with the PMMA-950K resist for the fabrication of closely spaced holes having inhomogeneous spatial distributions are studied. The technological parameters for the creation of two-dimensional photonic crystals with microcavities (missing holes) arrays, which allow obtaining the lateral sizes of the structure within the accuracy better than 2 %, in silicon using electron-beam lithography are determined. Such holes fabrication accuracy is thought to be sufficient to study the interference effects of cavity array radiation in twodimensional photonic crystals.


2004 ◽  
Vol 36 (1-3) ◽  
pp. 265-270 ◽  
Author(s):  
T. Stomeo ◽  
A. Passaseo ◽  
R. Cingolani ◽  
M. De Vittorio

2003 ◽  
Vol 83 (25) ◽  
pp. 5289-5291 ◽  
Author(s):  
P. Ferrand ◽  
M. Egen ◽  
R. Zentel ◽  
J. Seekamp ◽  
S. G. Romanov ◽  
...  

Nanomaterials ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 2329
Author(s):  
Angela Mihaela Baracu ◽  
Marius Andrei Avram ◽  
Carmen Breazu ◽  
Mihaela-Cristina Bunea ◽  
Marcela Socol ◽  
...  

This study presents the design and manufacture of metasurface lenses optimized for focusing light with 1.55 µm wavelength. The lenses are fabricated on silicon substrates using electron beam lithography, ultraviolet-nanoimprint lithography and cryogenic deep reactive-ion etching techniques. The designed metasurface makes use of the geometrical phase principle and consists of rectangular pillars with target dimensions of height h = 1200 nm, width w = 230 nm, length l = 354 nm and periodicity p = 835 nm. The simulated efficiency of the lens is 60%, while the master lenses obtained by using electron beam lithography are found to have an efficiency of 45%. The lenses subsequently fabricated via nanoimprint are characterized by an efficiency of 6%; the low efficiency is mainly attributed to the rounding of the rectangular nanostructures during the pattern transfer processes from the resist to silicon due to the presence of a thicker residual layer.


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