Reactive ion etching with end point detection of microstructured Mo/Si multilayers by optical emission spectroscopy

2000 ◽  
Vol 54 (3-4) ◽  
pp. 303-314 ◽  
Author(s):  
L. Dreeskornfeld ◽  
R. Segler ◽  
G. Haindl ◽  
O. Wehmeyer ◽  
S. Rahn ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Reactive Ion Etching ◽  
Optical Emission ◽  
Ion Etching ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

Monitoring of Sidewall Spacer Etch by Optical Emission Spectroscopy and Mass Spectroscopy

1997 ◽  
Vol 502 ◽  
Author(s):  
K. Min ◽  
J. J. Chambers ◽  
G. N. Parsons ◽  
J. R. Hauser
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Cross Sectional ◽  
End Point ◽  
Selective Etch ◽  
End Point Detection ◽  
Point Detection ◽  
Sectional Analysis

ABSTRACTSelective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.

Etch end-point detection of GaN-based devices using optical emission spectroscopy

2001 ◽  
Vol 82 (1-3) ◽  
pp. 159-162 ◽  
Author(s):  
H.S. Kim ◽  
Y.J. Sung ◽  
D.W. Kim ◽  
T. Kim ◽  
M.D. Dawson ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
End Point ◽  
End Point Detection ◽  
Point Detection

End-point Detection of Reactive Ion Etching by Plasma Impedance Monitoring

2001 ◽  
Vol 40 (Part 1, No. 3A) ◽  
pp. 1457-1462 ◽  
Author(s):  
Masaaki Kanoh ◽  
Masashi Yamage ◽  
Hiroyuki Takada
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
End Point ◽  
Plasma Impedance ◽  
Impedance Monitoring ◽  
End Point Detection ◽  
Point Detection
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