Utilization of Optical Emission Spectroscopy for End-Point Detection during AlGaAs/GaAs and InGaP/GaAs Etching in BCl[sub 3]/N[sub 2] Inductively Coupled Plasmas

2001 ◽  
Vol 148 (9) ◽  
pp. G472
Author(s):  
J. W. Lee ◽  
M. H. Jeon ◽  
G. S. Cho ◽  
H. C. Yim ◽  
S. K. Chang ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Inductively Coupled Plasmas ◽  
Inductively Coupled ◽  
End Point ◽  
End Point Detection ◽  
Coupled Plasmas ◽  
Point Detection

Monitoring of Sidewall Spacer Etch by Optical Emission Spectroscopy and Mass Spectroscopy

1997 ◽  
Vol 502 ◽  
Author(s):  
K. Min ◽  
J. J. Chambers ◽  
G. N. Parsons ◽  
J. R. Hauser
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Cross Sectional ◽  
End Point ◽  
Selective Etch ◽  
End Point Detection ◽  
Point Detection ◽  
Sectional Analysis

ABSTRACTSelective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.

Etch end-point detection of GaN-based devices using optical emission spectroscopy

2001 ◽  
Vol 82 (1-3) ◽  
pp. 159-162 ◽  
Author(s):  
H.S. Kim ◽  
Y.J. Sung ◽  
D.W. Kim ◽  
T. Kim ◽  
M.D. Dawson ◽  
...  
Keyword(s):  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
End Point ◽  
End Point Detection ◽  
Point Detection
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