End point detection in ion milling processes by sputter‐induced optical emission spectroscopy

1984 ◽  
Vol 2 (2) ◽  
pp. 481-484 ◽  
Author(s):  
C. Lu ◽  
M. Dorian ◽  
M. Tabei ◽  
A. Elsea
1997 ◽  
Vol 502 ◽  
Author(s):  
K. Min ◽  
J. J. Chambers ◽  
G. N. Parsons ◽  
J. R. Hauser

ABSTRACTSelective etch of SiO2/poly Si in a high density CF4+D2 plasma generated by ECR (Electron Cyclotron Resonance) system was studied. The end point detection of the SiO2 sidewall spacer etch was monitored using optical emission spectroscopy and mass spectrometer. SEM cross sectional analysis was conducted to confirm the end point detection and spacer formation.


2001 ◽  
Vol 82 (1-3) ◽  
pp. 159-162 ◽  
Author(s):  
H.S. Kim ◽  
Y.J. Sung ◽  
D.W. Kim ◽  
T. Kim ◽  
M.D. Dawson ◽  
...  

1991 ◽  
Vol 58 (3) ◽  
pp. 240-242 ◽  
Author(s):  
David Angell ◽  
Gottlieb S. Oehrlein

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