A comparative structural characterization of two cellobiohydrolases from Trichoderma reesei: a high resolution electron microscopy study

1997 ◽  
Vol 57 (1-3) ◽  
pp. 127-136 ◽  
Author(s):  
H.Jong Lee ◽  
R.Malcolm Brown
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Trichoderma Reesei ◽  
Structural Characterization ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Electron ◽  
Comparative Structural Characterization

High resolution electron microscopy study of the cationic disorder in Al2TiO5

1991 ◽  
Vol 6 (1) ◽  
pp. 138-145 ◽  
Author(s):  
T. Epicier ◽  
G. Thomas ◽  
H. Wohlfromm ◽  
J.S. Moya
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Microstructural Characterization ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Experimental Conditions ◽  
Resolution Electron ◽  
Point To Point

As part of a research program devoted to the microstructural characterization of Al2TiO5-based compounds, high resolution electron microscopy (HREM) has been undertaken in order to study the crystallographic arrangement, especially ordering possibilities, of Al and Ti cations in the metallic sublattice of aluminum titanate. It is seen that adequate experimental conditions, mainly defocus setting, for a resolution of at least 2.5 Å point-to-point, enable the disordered model to be directly and unambiguously proved on 100-oriented micrographs.

Silicon-Sapphire Interface: A High Resolution Electron Microscopy Study

1980 ◽  
Vol 2 ◽  
Author(s):  
Fernando A. Ponce
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Silicon Layer ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Limit ◽  
High Concentration ◽  
Transmission Electron ◽  
Resolution Electron

ABSTRACTThe structure of the silicon-sapphire interface of CVD silicon on a (1102) sapphire substrate has been studied in crøss section by high resolution transmission electron microscopy. Multibeam images of the interface region have been obtained where both the silicon and sapphire lattices are directly resolved. The interface is observed to be planar and abrupt to the instrument resolution limit of 3 Å. No interfacial phase is evident. Defects are inhomogeneously distributed at the interface: relatively defect-free regions are observed in the silicon layer in addition to regions with high concentration of defects.

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