Graphite irradiated by swift heavy ions under grazing incidence

2002 ◽  
Vol 193 (1-4) ◽  
pp. 259-264 ◽  
Author(s):  
J Liu ◽  
C Trautmann ◽  
C Müller ◽  
R Neumann
Keyword(s):  
Heavy Ions ◽  
Grazing Incidence ◽  
Swift Heavy Ions

scholarly journals High resolution AFM studies of irradiated mica—following the traces of swift heavy ions under grazing incidence

2018 ◽  
Vol 30 (28) ◽  
pp. 285001 ◽  
Author(s):  
Elisabeth Gruber ◽  
Lorenz Bergen ◽  
Pierre Salou ◽  
Elie Lattouf ◽  
Clara Grygiel ◽  
...  
Keyword(s):  
High Resolution ◽  
Heavy Ions ◽  
Grazing Incidence ◽  
Swift Heavy Ions

scholarly journals Mechanisms of surface nanostructuring of Al2O3 and MgO by grazing incidence irradiation with swift heavy ions

2021 ◽  
pp. 101508
Author(s):  
M. Karlušić ◽  
R.A. Rymzhanov ◽  
J.H. O'Connell ◽  
L. Bröckers ◽  
K. Tomić Luketić ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Grazing Incidence ◽  
Surface Nanostructuring ◽  
Swift Heavy Ions

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

scholarly journals Polymers under Ionizing Radiations: the Specificity of Swift Heavy Ions

2016 ◽  
Vol 115 ◽  
pp. 02003
Author(s):  
Yvette Ngono-Ravache ◽  
Muriel Ferry ◽  
Stéphane Esnouf ◽  
Emmanuel Balanzat
Keyword(s):  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Ionizing Radiations

Characterization of biodegradable polymers irradiated with swift heavy ions

2012 ◽  
Vol 273 ◽  
pp. 47-50 ◽  
Author(s):  
N.G. Salguero ◽  
M.F. del Grosso ◽  
H. Durán ◽  
P.J. Peruzzo ◽  
J.I. Amalvy ◽  
...  
Keyword(s):  
Biodegradable Polymers ◽  
Heavy Ions ◽  
Swift Heavy Ions
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