activation annealing
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Ohmic contact formation to GaN by Si+ implantation doping: Retarding layer, implantation fluence, encapsulation, and activation annealing temperature studies

2021 ◽  
Vol 122 ◽  
pp. 105491
Author(s):  
Maciej A. Kozubal ◽  
Pągowska Karolina ◽  
Taube Andrzej ◽  
Kruszka Renata ◽  
Sankowska Iwona ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Annealing Temperature ◽  
Contact Formation ◽  
Activation Annealing ◽  
Ohmic Contact Formation ◽  
Implantation Fluence

Bias stress instability of LTPS TFTs on flexible substrate with activation annealing temperature

2020 ◽  
Vol 113 ◽  
pp. 113940
Author(s):  
Soonkon Kim ◽  
Hyojung Kim ◽  
Kihwan Kim ◽  
Pyungho Choi ◽  
Byoungdeog Choi
Keyword(s):  
Annealing Temperature ◽  
Flexible Substrate ◽  
Bias Stress ◽  
Activation Annealing

scholarly journals Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing

2020 ◽  
Vol 130 (2) ◽  
pp. 27001
Author(s):  
Ke Wang ◽  
Hai-Ou Li ◽  
Gang Luo ◽  
Xin Zhang ◽  
Fang-Ming Jing ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Metal Oxide ◽  
Semiconductor Devices ◽  
High Vacuum ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Activation Annealing

Flatband Voltage Tuning of HfSiON-Based Gate Stacks: Impact of High Temperature Activation Annealing and LaOx Capping Layers

2019 ◽  
Vol 35 (4) ◽  
pp. 805-813 ◽  
Author(s):  
Rachid Boujamaa ◽  
Sylvain Baudot ◽  
Eugénie Martinez ◽  
Olivier Renault ◽  
Blanka Detlefs ◽  
...  
Keyword(s):  
High Temperature ◽  
Gate Stacks ◽  
Flatband Voltage ◽  
Temperature Activation ◽  
Activation Annealing ◽  
Voltage Tuning

Defects and electrical properties in Al-implanted 4H-SiC after activation annealing

2019 ◽  
Vol 28 (10) ◽  
pp. 106101
Author(s):  
Yi-Dan Tang ◽  
Xin-Yu Liu ◽  
Zheng-Dong Zhou ◽  
Yun Bai ◽  
Cheng-Zhan Li
Keyword(s):  
Electrical Properties ◽  
Activation Annealing

scholarly journals Effects of Dosage Increase on Electrical Properties of Metal‐Oxide‐Semiconductor Diodes with Mg‐Ion‐Implanted GaN Before Activation Annealing

2019 ◽  
Vol 257 (2) ◽  
pp. 1900367 ◽  
Author(s):  
Masamichi Akazawa ◽  
Ryo Kamoshida ◽  
Shunta Murai ◽  
Tetsuo Narita ◽  
Masato Omori ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dosage Increase ◽  
Activation Annealing ◽  
Ion Implanted
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