A study of Si wafer bonding via methanol capillarity

2003 ◽  
Vol 77 (3) ◽  
pp. 751-754 ◽  
Author(s):  
C.F Jerez-Hanckes ◽  
D Qiao ◽  
S.S Lau
Keyword(s):  
Wafer Bonding ◽  
Si Wafer

Chemical Mechanical Planarization Technology for Si Wafer Bonding

2019 ◽  
Vol 33 (10) ◽  
pp. 153-156
Author(s):  
JongHeun Lim ◽  
BoUn Yoon ◽  
KyungHyun Kim ◽  
YoungSun Ko ◽  
ChangJin Kang
Keyword(s):  
Wafer Bonding ◽  
Chemical Mechanical Planarization ◽  
Si Wafer

Low-temperature Au–Si wafer bonding

2010 ◽  
Vol 20 (9) ◽  
pp. 095014 ◽  
Author(s):  
Errong Jing ◽  
Bin Xiong ◽  
Yuelin Wang
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Si Wafer

Photoelectroscopic Study of Mn Barrier Layer on SiO2 for Si Wafer Bonding Process

2019 ◽  
Author(s):  
Takahiro Nagata ◽  
Kazumichi Tsumura ◽  
Kenro Nakamura ◽  
Kengo Uchida ◽  
Jin Kawakita ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Wafer Bonding ◽  
Bonding Process ◽  
Si Wafer

scholarly journals Geometry and Thermal Stress Analysis of In-plane Outgassing Channels in Al2O3-Intermediated InP (Die)-to-Si (Wafer) Bonding

2015 ◽  
Vol 5 (2) ◽  
pp. P117-P123
Author(s):  
Yiding Lin ◽  
P. Anantha ◽  
Kwang Hong Lee ◽  
Shen Lin Chua ◽  
Lingru Shang ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Stress Analysis ◽  
Wafer Bonding ◽  
Thermal Stress Analysis ◽  
Si Wafer

Sequential Activation Process of oxygen RIE and nitrogen Radical for LiTaO3 and Si Wafer Bonding

2019 ◽  
Vol 3 (6) ◽  
pp. 91-98 ◽  
Author(s):  
Yoshikaju Zikuhara ◽  
Eiji Higurashi ◽  
Noboru Tamura ◽  
T. Suga
Keyword(s):  
Wafer Bonding ◽  
Activation Process ◽  
Sequential Activation ◽  
Nitrogen Radical ◽  
Si Wafer

Low-temperature Si/Si wafer bonding using boride-treated surface

2009 ◽  
Author(s):  
Hailan Song ◽  
Hui Huang ◽  
Xiaomin Ren ◽  
Wenjuan Wang ◽  
Yongqing Huang
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Si Wafer

Si Wafer Bonding: Structural Features of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 85-90 ◽  
Author(s):  
V.I. Vdovin ◽  
N.D. Zakharov ◽  
Eckhard Pippel ◽  
P. Werner ◽  
M.G. Milvidskii ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Wafer Bonding ◽  
Lattice Mismatch ◽  
Twist Angle ◽  
Structural Features ◽  
High Temperature Annealing ◽  
Bonded Interface ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Si Wafer

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

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