scholarly journals Anomalous Hall effect and weak localization corrections in a ferromagnet

2002 ◽  
Vol 242-245 ◽  
pp. 464-466 ◽  
Author(s):  
A Crépieux ◽  
J Wunderlich ◽  
V.K Dugaev ◽  
P Bruno
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect

Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

2015 ◽  
Vol 1120-1121 ◽  
pp. 424-428
Author(s):  
C.Y. Zou ◽  
Lai Sen Wang ◽  
Xiang Liu ◽  
Q.F. Zhang ◽  
Jun Bao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Magnetron Sputtering ◽  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Scaling Relation ◽  
Strong Disorder ◽  
Region Temperature ◽  
Localization Region

In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρAxy) have no scaling relation between ρxy and ρxx in weak localization region with temperature below 50 K. In metal region, temperature ranged from 50 K to 300 K, the relation between ρAxy and ρxxis ρAxy=A+bρ2xx, which indicates that the AHE in this Co thin film is scattering-independence at high temperature. The results also shows that the WL effect have a significant impact on the AHE of the Co thin film at low temperature.

scholarly journals Weak-Localization Correction to the Anomalous Hall Effect in Polycrystalline Fe Films

2007 ◽  
Vol 99 (4) ◽  
Author(s):  
P. Mitra ◽  
R. Misra ◽  
A. F. Hebard ◽  
K. A. Muttalib ◽  
P. Wölfle
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect

Weak localization corrections to the anomalous Hall effect

2002 ◽  
Vol 240 (1-3) ◽  
pp. 159-161 ◽  
Author(s):  
V.K. Dugaev ◽  
A. Crépieux ◽  
P. Bruno
Keyword(s):  
Hall Effect ◽  
Weak Localization ◽  
Anomalous Hall Effect

Localization Correction to Anomalous Hall Effect in the Perpendicular CoFeB Thin Films

SPIN ◽  
2015 ◽  
Vol 05 (04) ◽  
pp. 1540013
Author(s):  
Jinjun Ding ◽  
Xiaofei Yang ◽  
Tao Zhu
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sheet Resistance ◽  
Weak Localization ◽  
Anomalous Hall Effect ◽  
Skew Scattering ◽  
Mgo Layers

In this paper, we reported an obvious weak localization (WL) effect in perpendicular CoFeB sandwiched by Ta and MgO layers. The WL correction to the anomalous Hall effect (AHE) arises when the sheet resistance is larger than 1.5[Formula: see text]k[Formula: see text]. Furthermore, it is found that the mechanism of AHE is strongly related to the characteristic of the granularity in the MgO/CoFeB/Ta thin films. Both skew scattering and side jump mechanisms will give comparable contribution in the high disorder regime.

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 2D‐Berry‐Curvature‐Driven Large Anomalous Hall Effect in Layered Topological Nodal‐Line MnAlGe

2021 ◽  
pp. 2006301
Author(s):  
Satya N. Guin ◽  
Qiunan Xu ◽  
Nitesh Kumar ◽  
Hsiang‐Hsi Kung ◽  
Sydney Dufresne ◽  
...  
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Nodal Line ◽  
Berry Curvature ◽  
Curvature Driven

scholarly journals Anomalous Hall effect in a magnetically extended topological insulator heterostructure

2020 ◽  
Vol 4 (9) ◽  
Author(s):  
Nan Liu ◽  
Xuefan Niu ◽  
Yuxin Liu ◽  
Qinghua Zhang ◽  
Lin Gu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Topological Insulator ◽  
Anomalous Hall Effect
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