Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface

This paper concerns research on magnesium oxide layers in terms of their potential use as a gate material for SiC MOSFET structures. The two basic systems of MgO/SiC(0001) and MgO/graphite/SiC(0001) were deeply investigated in situ under ultrahigh vacuum (UHV). In both cases, the MgO layers were obtained by a reactive evaporation method. Graphite layers terminating the SiC(0001) surface were formed by thermal annealing in UHV. The physicochemical properties of the deposited MgO layers and the systems formed with their participation were determined using X-ray and UV photoelectron spectroscopy (XPS, UPS). The results confirmed the formation of MgO compounds. Energy level diagrams were constructed for both systems. The valence band maximum of MgO layers was embedded deeper on the graphitized surface than on the SiC(0001).

The impact of number of repeats N on the interlayer exchange in $$[\text {Fe/MgO}]_{N} $$(001) superlattices

The strength of the interlayer exchange coupling in [Fe/MgO]$$_N$$ N (001) superlattices with 2 ≤ N ≤ 10 depends on the number of bilayer repeats (N). The exchange coupling is antiferromagnetic for all the investigated thicknesses while being nine times larger in a sample with N = 4 as compared to N = 2. The sequence of the magnetic switching in two of the samples (N = 4, N = 8) is determined using polarized neutron reflectometry. The outermost layers are shown to respond at the lowest fields, consistent with having the weakest interlayer exchange coupling. The results are consistent with the existence of quantum well states defined by the thickness of the Fe and the MgO layers as well as the number of repeats (N) in [Fe/MgO]$$ _{N}$$ N (001)superlattices.

SECONDARY ELECTRON EMISSION INDUCED BY α-PARTICLES FROM Mg-MgO LAYERS

The paper presents the results of experimental study of forward and backward electron emission induced by α-particles from the deposited film of magnesium. It was shown that during the deposition of magnesium in residual gas atmosphere the deposited film contained a large amount of MgO component, which makes it possible to consider the resulting structure as Mg-MgO. The presence of magnesium oxide on the surface of the target and the collector leads to the fact that the previously obtained dependence of the ratio of forward and backward electron yields on specific energy loss of the ion for various metals is not applicable in the case of deposited magnesium. The differences are explained by the specificity of the emission from magnesium in the presence of a significant amount of MgO. The results obtained can be used to detect MgO on the surface of a magnesium substrate. It was shown the differences in the experimental data for the bulk magnesium collector and the collector with deposited magnesium layer

Surface passivated and encapsulated ZnO atomic layers by high-κ ultrathin MgO layers

Atomically transparent vertically aligned ZnO-based van der Waals materials have been developed by surface passivation and encapsulation with atomic layers of MgO using materials by design, and their physical properties have been investigated.