Pattern analysis with two-dimensional spectral localisation: Applications of two-dimensional S transforms

1997 ◽  
Vol 239 (1-3) ◽  
pp. 286-295 ◽  
Author(s):  
L. Mansinha ◽  
R.G. Stockwell ◽  
R.P. Lowe
Keyword(s):  
Pattern Analysis ◽  
Two Dimensional

Component spatial pattern analysis of chemicals by use of two-dimensional electro-optic terahertz imaging

2005 ◽  
Vol 44 (25) ◽  
pp. 5198 ◽  
Author(s):  
Masatsugu Yamashita ◽  
Mamoru Usami ◽  
Kazushiro Fukushima ◽  
Ryoichi Fukasawa ◽  
Chiko Otani ◽  
...  
Keyword(s):  
Spatial Pattern ◽  
Pattern Analysis ◽  
Terahertz Imaging ◽  
Spatial Pattern Analysis ◽  
Two Dimensional ◽  
Electro Optic

Structural analysis of faceted grain boundaries in Bi-doped Cu

1989 ◽  
Vol 47 ◽  
pp. 278-279
Author(s):  
D. E. Luzzi ◽  
B. Blum ◽  
H. Inui
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Phase Transformation ◽  
Structural Analysis ◽  
Grain Boundaries ◽  
Degrees Of Freedom ◽  
Pattern Analysis ◽  
Two Dimensional ◽  
Kikuchi Pattern ◽  
Transmission Electron

Conventional(CTEM)and high-resoIution(HREM) transmission electron microscopy have been used to investigate the structure of faceted grain boundaries in Cu doped with Bi. The solubility of Bi in Cu exhibits retrograde behavior with a maximum of 160 at. ppm. at 850 ° C and decreasing above and below this temperature (eg. to < 3 at. ppm. at 600 ° C). When aged at temperatures below this retrograde region, Blis known to segregate tothe grain boundaries. In addition to this segregation, these materials exhibit a reversible faceting-de-faceting transition at 710 ° C which has been postulated asarising from a two-dimensional phase transformation at the grain boundaries. Until the present time, little experimental work has been doneto characterize the structures of these faceted boundaries.In the present experiments, Kikuchi pattern analysis and edge-on imaging have been used to characterize the five macroscopic degrees of freedom of individual facets. Bulk Cu specimens with 50 at.ppm.

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