Evidence for quantum size effects in self-assembled polymer-based heterostructures

1999 ◽  
Vol 102 (1-3) ◽  
pp. 955-956 ◽  
Author(s):  
A.V. Yakimov ◽  
V.N. Savvate'ev ◽  
H. Hong ◽  
D. Davidov
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Self Assembled

Possible evidence for quantum‐size effects in self‐assembled ultrathin films containing conjugated copolymers

1996 ◽  
Vol 79 (6) ◽  
pp. 3082-3088 ◽  
Author(s):  
H. Hong ◽  
M. Tarabia ◽  
H. Chayet ◽  
D. Davidov ◽  
E. Z. Faraggi ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Self Assembled ◽  
Conjugated Copolymers

Superior optical response of size-controlled silicon nano-crystals in a-Si:H/nc-Si:H superlattice films for multi-junction solar cells

RSC Advances ◽  
2015 ◽  
Vol 5 (75) ◽  
pp. 61118-61126 ◽  
Author(s):  
Debjit Kar ◽  
Debajyoti Das
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Size Effects ◽  
Optical Response ◽  
Band Gaps ◽  
Quantum Size Effects ◽  
Optical Band Gaps ◽  
Quantum Size ◽  
Self Assembled ◽  
Size Controlled

In order to facilitate widening in optical band gaps utilizing quantum size-effects, self-assembled Si-ncs embedded in an a-Si matrix were grown within a-Si:H/nc-Si:H superlattice thin films produced by alternating sub-layers of a-Si:H and nc-Si:H.

Search for quantum size effects in ultrathin epitaxial metallic films

1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Metallic Films ◽  
Quantum Size

QUANTUM-SIZE EFFECTS ON THE OPTICAL PROPERTIES OF SMALL PARTICLES

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores
Keyword(s):  
Optical Properties ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Small Particles ◽  
Quantum Size

Quantum size effects in semiconducting and semimetallic films

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Quantum size effects for the extraordinary Hall effect in thin magnetic films

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev
Keyword(s):  
Hall Effect ◽  
Size Effects ◽  
Magnetic Films ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Magnetic Films ◽  
Extraordinary Hall Effect

Thermoelectric power in very thin film thermocouples: Quantum size effects

2006 ◽  
Vol 100 (11) ◽  
pp. 114905 ◽  
Author(s):  
M. Cattani ◽  
M. C. Salvadori ◽  
A. R. Vaz ◽  
F. S. Teixeira ◽  
I. G. Brown
Keyword(s):  
Thin Film ◽  
Thermoelectric Power ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Film Thermocouples

Quantum size effects in nanocrystalline semiconducting titania layers prepared by anodic oxidative hydrolysis of titanium trichloride

1993 ◽  
Vol 97 (37) ◽  
pp. 9493-9498 ◽  
Author(s):  
Ladislav Kavan ◽  
Tiziana Stoto ◽  
Michael Graetzel ◽  
Donald Fitzmaurice ◽  
Valery Shklover
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Titanium Trichloride ◽  
Hydrolysis Of

Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

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