Quantum Confinement Effects on the Dielectric Constant of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
R. Tsu ◽  
L. Ioriatti ◽  
J. F. Harvey ◽  
H. Shen ◽  
R. A. Lux
Keyword(s):  
Dielectric Constant ◽  
Porous Silicon ◽  
Size Effects ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Index Of Refraction ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Shallow Impurities

ABSTRACTThe reduction of the dielectric constant due to quantum confinement is studied both experimentally and theoretically. Angle resolved ellipsometry measurements with Ar- and He-Ne-lasers give values for the index of refraction far below what can be accounted for from porosity alone. A modified Penn model to include quantum size effects has been used to calculate the reduction in the static dielectric constant (ε) with extreme confinement. Since the binding energy of shallow impurities depends inversely on ε2, the drastic decrease in the carrier concentration as a result of the decrease in ε leads to a self-limiting process for the electrochemical etching of porous silicon.

Quantum size effects on the optical properties of nc-Si QDs embedded in an a-SiOx matrix synthesized by spontaneous plasma processing

2015 ◽  
Vol 17 (7) ◽  
pp. 5063-5071 ◽  
Author(s):  
Debajyoti Das ◽  
Arup Samanta
Keyword(s):  
Optical Properties ◽  
Size Effects ◽  
Quantum Confinement ◽  
Plasma Processing ◽  
Blue Shift ◽  
Quantum Size Effects ◽  
Confinement Effects ◽  
Quantum Size ◽  
Quantum Confinement Effects ◽  
Stokes Shifts

An energy blue shift due to quantum confinement effects in tiny nc-Si QDs accompanied by larger Stokes shifts in PL at smaller dimensions.

Porous Silicon Luminescence Study by Imaging Methods: Relationship to Pore Dimensions

1994 ◽  
Vol 332 ◽  
Author(s):  
Anna Kontkiewicz ◽  
Andrzej M. Kontkiewicz ◽  
Sidhartha Sen ◽  
Marek Wesolowski ◽  
Jacek Lagowski ◽  
...  
Keyword(s):  
Fourier Transform ◽  
Porous Silicon ◽  
Size Effects ◽  
Chemical Nature ◽  
Surface Photovoltage ◽  
Quantum Size Effects ◽  
Optical Absorption Edge ◽  
Spectroscopy Analysis ◽  
Quantum Size ◽  
Atomic Force

ABSTRACTIn a photoluminescence and surface photovoltage study of porous silicon films with crystallite dimensions assessed with the Atomic Force Microscope, we have found cases when the blue shifts of the luminescence spectrum and the optical absorption edge take place upon increasing crystallite dimensions, which is contrary to quantum size effects. Fourier transform infrared spectroscopy analysis of these samples shows significant differences in hydrogen and oxygen bonding, which imply that the origin of the luminescence is of chemical nature. Our results show that porous silicon luminescence is not a consequence of one mechanism, but rather results from several mechanisms with contributions depending on the chemistry and structure of porous silicon.

Quantum size effects on the conductivity in porous silicon

1996 ◽  
Vol 198-200 ◽  
pp. 911-914 ◽  
Author(s):  
Wook Hyoung Lee ◽  
Choochon Lee ◽  
J. Jang
Keyword(s):  
Porous Silicon ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Quantum confinement in group III–V semiconductor 2D nanostructures

Nanoscale ◽  
2020 ◽  
Vol 12 (33) ◽  
pp. 17494-17501 ◽  
Author(s):  
Luis A. Cipriano ◽  
Giovanni Di Liberto ◽  
Sergio Tosoni ◽  
Gianfranco Pacchioni
Keyword(s):  
Band Gap ◽  
Size Effects ◽  
Quantum Confinement ◽  
Quantum Size Effects ◽  
Group Iii ◽  
Quantum Size ◽  
Group Iii V Semiconductor

Band gap variation in group III–V semiconductor slabs due to quantum size effects.

Observation of quantum confinement and quantum size effects

2008 ◽  
Vol 205 (4) ◽  
pp. 896-900 ◽  
Author(s):  
A. C. Diebold ◽  
J. Price
Keyword(s):  
Size Effects ◽  
Quantum Confinement ◽  
Quantum Size Effects ◽  
Quantum Size

scholarly journals In-situ x-ray scattering studies of Ag nano-structures

2016 ◽  
Author(s):  
◽  
Yiyao Chen
Keyword(s):  
Size Effects ◽  
Quantum Confinement ◽  
Quantum Size Effects ◽  
Wetting Layer ◽  
Minimum Thickness ◽  
X Ray ◽  
Quantum Size ◽  
X Ray Scattering ◽  
Ray Scattering

When metals are synthesized on the nanoscale, new physics can arise in the growth process as quantum confinement of the conduction electrons, known as quantum size effects, can lead to preferred heights of metallic nanoscale islands. Despite a significant amount of prior research, there has been a poor understanding of the growth behavior of the simple noble metal, Ag, on the Si(111)7x7 substrate and researchers have been unable to connect its growth morphology to quantum size effects. This dissertation investigated the growth of Ag on Si(111)7x7, in situ and in ultra-high vacuum, using synchrotron x-ray scattering. Because of the unique ability of this technique to explore the structure of a buried interface on the atomic scale, these studies led to a clear understanding of the role of quantum size effects in the growth behavior of this system. The studies address the epitaxial relationship between Ag and the substrate as well as the transition from the wetting layer to the growth of nanoscale islands. It is found that islands have a minimum thickness of three Ag atomic layers, which is in contrast to the bilayer on top of a wetting layer that has been reported in previous scanning tunneling microscopy studies. Ag islands are found to form after the completion of the Ag/Si(111)7x7 wetting layer and they convert the underlying wetting layer into the FCC structure of the island. The observed preference of the Ag islands is explained by the energy per area of the island, which derives from quantum confinement effects, and its two phase coexistence with the wetting layer. For thicker island heights, it is found that the distribution of island heights refl ect the minimum thickness of three layers. The height fluctuations are observed to exhibit a Poisson-like distribution where only the low heights in the fl uctuation spectrum deviate from a Poisson distribution. A model of the height distribution is presented. Techniques for exploring buried nanoscale vacancy defects in metals using diffuse x-ray scattering were also explored in this dissertation. Strain fields due to nanoscale vacancy clusters located below a surface were explored through analytical modeling of elastic displacements as well from results of accelerated molecular dynamics simulations. A method for numerically calculating diffuse scattering from nanoscale vacancy clusters was also explored. As new technologies continue to exploit thin-film metals on nanoscale dimensions, this investigation provides important new understanding about how metals grow on the nanoscale.

Search for quantum size effects in ultrathin epitaxial metallic films

1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Metallic Films ◽  
Quantum Size

QUANTUM-SIZE EFFECTS ON THE OPTICAL PROPERTIES OF SMALL PARTICLES

1983 ◽  
Vol 44 (C10) ◽  
pp. C10-375-C10-378 ◽  
Author(s):  
P. Ahlqvist ◽  
P. de Andrés ◽  
R. Monreal ◽  
F. Flores
Keyword(s):  
Optical Properties ◽  
Size Effects ◽  
Quantum Size Effects ◽  
Small Particles ◽  
Quantum Size

Quantum size effects in semiconducting and semimetallic films

1968 ◽  
Vol 96 (9) ◽  
pp. 61-86 ◽  
Author(s):  
B.A. Tavger ◽  
V.Ya. Demikhovskii
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Quantum Size

Quantum size effects for the extraordinary Hall effect in thin magnetic films

1997 ◽  
Vol 229 (6) ◽  
pp. 401-405 ◽  
Author(s):  
A. Crépieux ◽  
C. Lacroix ◽  
N. Ryzhanova ◽  
A. Vedyayev
Keyword(s):  
Hall Effect ◽  
Size Effects ◽  
Magnetic Films ◽  
Quantum Size Effects ◽  
Quantum Size ◽  
Thin Magnetic Films ◽  
Extraordinary Hall Effect
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