Temperature dependence of the current distribution in the quantum hall regime in a distributed magnetic field

We have studied transport in a narrow Hall bar subjected to a transversally modulated magnetic field in quantum Hall regime. Landau level spatially varies across the channel and suppresses back scattering between oppositely directed edge channels. The resistance suppressed by the "magnetic barrier" recovers with increasing temperature, showing thermally activated temperature dependence.

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Current Distribution in the Quantum Hall Regime Observed in a Distributed Magnetic Field

Journal of the Physical Society of Japan ◽

10.1143/jpsj.66.413 ◽

1997 ◽

Vol 66 (2) ◽

pp. 413-418 ◽

Cited By ~ 3

Author(s):

Junichi Wakabayashi ◽

Katsuhiko Sumiyoshi ◽

Toshio Nagashima ◽

Takashi Mochiku ◽

Kazuo Kadowaki

Keyword(s):

Magnetic Field ◽

Current Distribution ◽

Quantum Hall ◽

Quantum Hall Regime ◽

Hall Regime

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Current distribution in antidot arrays close to the quantum Hall regime

Physical Review B ◽

10.1103/physrevb.60.2561 ◽

1999 ◽

Vol 60 (4) ◽

pp. 2561-2570 ◽

Cited By ~ 5

Author(s):

Rolf R. Gerhardts ◽

Johannes Groß

Keyword(s):

Current Distribution ◽

Quantum Hall ◽

Quantum Hall Regime ◽

Hall Regime ◽

Antidot Arrays

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INFLUENCE OF NEARBY QD LAYER ON 2DES IN QUANTUM HALL REGIME

International Journal of Modern Physics B ◽

10.1142/s0217979207042987 ◽

2007 ◽

Vol 21 (08n09) ◽

pp. 1445-1449

Author(s):

K. TAKEHANA ◽

Y. IMANAKA ◽

T. TAKAMASU ◽

M. HENINI

Keyword(s):

Magnetic Field ◽

Transport Properties ◽

Gate Voltage ◽

Quantum Hall ◽

Electron System ◽

Hall Resistance ◽

Field Range ◽

Voltage Range ◽

Quantum Hall Regime ◽

Hall Regime

We have investigated transport properties in high magnetic field of a gated two-dimensional electron system (2DES) separated by a thin barrier from a layer of self-assembled InAs quantum dots (QDs) in the quantum Hall regime. The quality of 2DES was found to be high enough to observe both integer and fractional quantum Hall effect (QHE), despite the proximity of the QD layer to the 2DES. However, significant suppression of the magnetoresistance (ρ xx ) and Hall resistance (ρ xy ) were observed in higher magnetic field range of filling factor ν < 1 when a positive voltage was applied to the front gate. The gate voltage dependence of ρ xx and ρ xy shows a well-defined hysteresis loop at the narrow gate voltage range between -0.2 and +0.2 V at ν < 1, while no anomaly was observed at ν > 1. We deduce that charging and discharging of QDs occurs when the gate voltage is varied around Vg ~ 0 V, which indicates that the electron charge states of the QDs affect the transport properties of the nearby 2DES only at ν < 1. We infer that the spin-flip process induces a non-equilibrium state in the 2DEG, which causes the suppression of ρ xx and ρ xy .

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