Strontium titanate: valency of Ti+n and dielectrical properties of doped single crystals

1999 ◽  
Vol 269 (1) ◽  
pp. 49-59 ◽  
Author(s):  
N Kulagin ◽  
J Dojcilovic
2001 ◽  
Vol 79 (12) ◽  
pp. 1786-1788 ◽  
Author(s):  
A. G. Schrott ◽  
J. A. Misewich ◽  
M. Copel ◽  
D. W. Abraham ◽  
Y. Zhang

2002 ◽  
Vol 756 ◽  
Author(s):  
Karsten Gömann ◽  
Günter Borchardt ◽  
Anissa Gunhold ◽  
Wolfgang Maus-Friedrichs ◽  
Bernard Lesage ◽  
...  

ABSTRACTTracer diffusion experiments were carried out in synthetic air at 1573 K in SrTiO3(100) and (110) single crystals, which were either undoped or doped with up to 1 at.% La, respectively. Tracer sources of 139La and 142Nd were applied by ion implantation. The resulting depth profiles were measured by SIMS. The reconstruction of the surface was monitored ex-situ using microscopic and spectroscopic methods including SEM, EPMA, and AFM. The measured tracer diffusivities show no dependency on orientation. The tracer diffusion takes place via cation vacancies. Under oxidizing conditions the dopant is compensated by Sr vacancies. Hence the diffusion is increasing strongly with La concentration. The observed time dependency of the diffusivities may be related to a space charge layer postulated by the current defect chemistry model for donor doped SrTiO3. At high dopant concentrations annealing leads to segregation of bulk La to the surface. La is not significantly incorporated into the secondary crystallites at the surface which consist almost entirely of Sr and O.


1995 ◽  
Vol 61 (4) ◽  
pp. 389-395 ◽  
Author(s):  
R. Moos ◽  
W. Menesklou ◽  
K. H. H�rdtl

1970 ◽  
Vol 37 (2) ◽  
pp. 599-603 ◽  
Author(s):  
G. Sorge ◽  
E. Hegenbarth ◽  
G. Schmidt

2013 ◽  
Vol 10 (12) ◽  
pp. 1688-1691 ◽  
Author(s):  
Kensuke Akiyama ◽  
Atsuo Katagiri ◽  
Shota Ogawa ◽  
Masaaki Matsushima ◽  
Hiroshi Funakubo

Sign in / Sign up

Export Citation Format

Share Document