Cation Transport and Surface Reconstruction in Lanthanum Doped Strontium Titanate at High Temperatures

2002 ◽  
Vol 756 ◽  
Author(s):  
Karsten Gömann ◽  
Günter Borchardt ◽  
Anissa Gunhold ◽  
Wolfgang Maus-Friedrichs ◽  
Bernard Lesage ◽  
...  

ABSTRACTTracer diffusion experiments were carried out in synthetic air at 1573 K in SrTiO3(100) and (110) single crystals, which were either undoped or doped with up to 1 at.% La, respectively. Tracer sources of 139La and 142Nd were applied by ion implantation. The resulting depth profiles were measured by SIMS. The reconstruction of the surface was monitored ex-situ using microscopic and spectroscopic methods including SEM, EPMA, and AFM. The measured tracer diffusivities show no dependency on orientation. The tracer diffusion takes place via cation vacancies. Under oxidizing conditions the dopant is compensated by Sr vacancies. Hence the diffusion is increasing strongly with La concentration. The observed time dependency of the diffusivities may be related to a space charge layer postulated by the current defect chemistry model for donor doped SrTiO3. At high dopant concentrations annealing leads to segregation of bulk La to the surface. La is not significantly incorporated into the secondary crystallites at the surface which consist almost entirely of Sr and O.

2000 ◽  
Vol 20 (12) ◽  
pp. 2069-2077 ◽  
Author(s):  
M. Kilo ◽  
G. Borchardt ◽  
B. Lesage ◽  
O. Kaı̈tasov ◽  
S. Weber ◽  
...  

1983 ◽  
Vol 27 ◽  
Author(s):  
J.C. Soares ◽  
A.A. Melo ◽  
M.F. DA Silva ◽  
E.J. Alves ◽  
K. Freitag ◽  
...  

ABSTRACTLow and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.


2011 ◽  
Vol 257 (17) ◽  
pp. 7573-7578 ◽  
Author(s):  
K. Sangeetha ◽  
R. Ramesh Babu ◽  
P. Kumar ◽  
G. Bhagvannarayana ◽  
K. Ramamurthi

2001 ◽  
Vol 79 (12) ◽  
pp. 1786-1788 ◽  
Author(s):  
A. G. Schrott ◽  
J. A. Misewich ◽  
M. Copel ◽  
D. W. Abraham ◽  
Y. Zhang

1992 ◽  
Vol 262 ◽  
Author(s):  
D. Y. C. Lie ◽  
A. Vantomme ◽  
F. Eisen ◽  
M. -A. Nicolet ◽  
V. Arbet-Engels ◽  
...  

ABSTRACTWe have studied the damage and strain produced in Ge (100) single crystals by implantation of various doses of 300 keV 28Si ions at room temperature. The analyzing tools were x-ray double-crystal diffractometry, and MeV 4He channeling spectrometry. The damage induced by implantation produces positive strain in Ge (100). The maximum perpendicular strain and maximum defect concentration rise nonlinearly with increasing dose. These quantities are linearly related with a dose-independent coefficient of ∼ 0.013 for Ge (100) single crystals implanted at room temperature. The results are compared with those available for Si (100) self-implantation. We have also monitored the strain and defects generated in pseudomorphic Ge0.1Si0.9/Si (100) films induced by room temperature 28Si ion implantation. It is found that the relationship between the strain and defect concentration induced by ion implantation is no longer a simple linear one.


Vacuum ◽  
2013 ◽  
Vol 89 ◽  
pp. 132-135
Author(s):  
J.X. Xu ◽  
X.H. Xiao ◽  
F. Ren ◽  
X.D. Zhou ◽  
G.X. Cai ◽  
...  

2009 ◽  
Vol 45 (6) ◽  
pp. 606-610 ◽  
Author(s):  
A. N. Georgobiani ◽  
B. N. Levonovich

Author(s):  
Volodymyr D. Popovych ◽  
Roman Böttger ◽  
Rene Heller ◽  
Shengqiang Zhou ◽  
Mariusz Bester ◽  
...  

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