Fracture toughness and crack growth phenomena of plasma-etched single crystal silicon

2000 ◽  
Vol 83 (1-3) ◽  
pp. 194-199 ◽  
Author(s):  
A.M Fitzgerald ◽  
R.H Dauskardt ◽  
T.W Kenny
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Crack Growth ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Fracture Toughness of Single-Crystal Silicon Carbide

1977 ◽  
Vol 60 (7-8) ◽  
pp. 373-375 ◽  
Author(s):  
J. L. HENSHALL ◽  
D. J. ROWCLIFFE ◽  
J. W. EDINGTON
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

Fracture Toughness Measurement of a Micro-Sized Single Crystal Silicon

2005 ◽  
Vol 297-300 ◽  
pp. 292-298 ◽  
Author(s):  
Satoru Koyama ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Ion Beam ◽  
Testing Machine ◽  
Single Crystal Silicon ◽  
Mems Devices ◽  
Type Specimens ◽  
Crystal Silicon ◽  
Fracture Toughness Measurement ◽  
Toughness Measurement

Reliability is one of the most critical issues for designing practical MEMS devices. In particular, the fracture toughness of micro-sized MEMS elements is important, as micro/nano-sized flaws can act as a crack initiation sites to cause failure of such devices. Existing MEMS devices commonly use single crystal silicon. Fracture toughness testing upon micro-sized single crystal silicon was therefore carried out to examine whether a fracture toughness measurement technique, based upon the ASTM standard, is applicable to 1/1000th sized silicon specimens. Notched cantilever beam type specimens were prepared by focused ion beam machining. Two specimens types with different notch orientations were prepared. The notch plane/direction were (100)/[010], and (110)/[ ＿ ,110], respectively. Fracture toughness tests were carried out using a mechanical testing machine for micro-sized specimens. Fracture has been seen to occur in a brittle manner in both orientations. The provisional fracture toughness values (KQ) are 1.05MPam1/2 and 0.96MPam1/2, respectively. These values meet the micro-yielding criteria for plane strain fracture toughness values (KIC). Fracture toughness values for the orientations tested are of the same order as values in the literature. The results obtained in this investigation indicate that the fracture toughness measurement method used is applicable for micro-sized components of single crystal silicon in MEMS devices.

ChemInform Abstract: FRACTURE TOUGHNESS OF SINGLE-CRYSTAL SILICON CARBIDE

1977 ◽  
Vol 8 (44) ◽  
pp. no-no
Author(s):  
J. L. HENSHALL ◽  
D. J. ROWCLIFFE ◽  
J. W. EDINGTON
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals 21318 Evaluation of Fracture behavior and Fracture Toughness on Single Crystal Silicon Wafers

2009 ◽  
Vol 2009.15 (0) ◽  
pp. 537-538
Author(s):  
Hiroshi NAKAMURA ◽  
Masayoshi MIYASAKA ◽  
Ryota YANAGIDA ◽  
Masayoshi TATENO
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Fracture Behavior ◽  
Single Crystal Silicon ◽  
Silicon Wafers ◽  
Crystal Silicon

Removal Amount of Main Surface Induced Indentation Crack on Evaluation of Fracture Toughness of Single Crystal Silicon

2017 ◽  
Vol 2017.25 (0) ◽  
pp. 209
Author(s):  
Kazuki IIDA ◽  
Takasi TOMINAGA ◽  
Satoru SUDO ◽  
Masayosi MIYASAKA ◽  
Masayoshi TATENO
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Indentation Crack
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