Effect of molarity of precursor solution on structural and opto-electrical properties of ZnO thin films prepared by spray pyrolysis technique

2002 ◽  
Author(s):  
B Pawar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Zno Thin Films

Effect of aluminium doping concentration on microstructures, optical and electrical properties of ZnO thin films by spray pyrolysis technique

2018 ◽  
Vol 5 (3) ◽  
pp. 9519-9524 ◽  
Author(s):  
Worapot Sripianem ◽  
Alichapat Chuchuay ◽  
Pitcha Kiatthanabumrung ◽  
Natthida Saengow ◽  
Thanate Na Wichean ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Spray Pyrolysis Technique ◽  
Zno Thin Films ◽  
Optical And Electrical Properties ◽  
Aluminium Doping

Effect of Deposition Time on Structural and Optical Properties of ZnO Thin Films Deposited by Spray Pyrolysis

2019 ◽  
Vol 397 ◽  
pp. 81-87 ◽  
Author(s):  
Farid Khediri ◽  
Abdelkader Hafdallah ◽  
Mouna Bouhelal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Deposition Time ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray

In this work Zinc oxide thin films prepared by spray pyrolysis technique. A set of ZnO thin films were deposited with various deposition times, on glass substrate at 350 °C. The precursor solution is formed with zinc acetate in distilled methanol with 0.1 molarity. The deposition time was ranged from 2 to 8 min. The structural and optical properties of those films were examined by X-ray diffraction (XRD) and ultraviolet-visible spectrometer (UV). X-ray diffraction patterns of the ZnO thin films showed polycrystalline hexagonal wurtzite structure and the preferred orientation was along (002) plane when the grain size varied between 9.66 and 16.67nm. ZnO thin films were highly transparent in the visible with the maximum transmittance of 85% and the optical band gap was found between 3.25 and 3.28 eV.

scholarly journals Influence of Ag-Dopant on Structural Optical and Electrical Properties of Cu(1-x)AgxO Thin Films Prepared By Chemical Spray Pyrolysis Technique

2018 ◽  
Vol 4 (5) ◽  
pp. 542-545 ◽  
Author(s):  
R. Shabu ◽  
A. Moses Ezhil Raj
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Oxide Semiconductor ◽  
Chemical Spray Pyrolysis ◽  
Chemical Spray Pyrolysis Technique ◽  
Chemical Spray

As major attention has been paid to transition metal oxide semiconductor suitable for solar cell, photo detector and gas sensor, present study embark on the structural, optical and electrical characterization of Ag doped CuO thin films prepared using chemical spray pyrolysis technique at the constant substrate temperature of 350 �C. For Ag doping, various concentrations of silver acetate (0.5-3.0 wt.%) was used in the sprayed precursor solution. Confirmed monoclinic lattice shows the tenorite phase formation of CuO in the pure and Ag doped films. The optical band gap of the films was in the range of 2.4 -3.4 eV. A minimum resistivity of 0.0017x103 ohmcm was achieved in the 0.5 wt.% Ag doped film, and its optical band gap was 2.74 eV.

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