Improvement by surface modification of Ir electrode-barrier for Pb(Zr,Ti)O3-based high-density nonvolatile ferroelectric memories

2001 ◽  
Vol 1 (4-5) ◽  
pp. 379-384 ◽  
Author(s):  
Kwang Bae Lee ◽  
Seshu B Desu
2001 ◽  
Vol 72 (1) ◽  
pp. 13-20 ◽  
Author(s):  
R. Vedula ◽  
C.S. Desu ◽  
S. Tirumala ◽  
H.D. Bhatt ◽  
S.B. Desu ◽  
...  

1993 ◽  
Vol 334 ◽  
Author(s):  
T. Miyokawa ◽  
M. Okoshi ◽  
K. Toyoda ◽  
M. Murahara

AbstractSilicon films were deposited on a fluororesin surface. The process was divided into two steps: surface modification process and silicon CVD onto the modified parts. In the modification process, SiH4 and B(CH3)3 mixed gases were used with ArF excimer laser. Fluorine atoms of the surface were pulled out by boron atoms which were photo—dissociated from B(CH3)3 and were replaced with silicon atoms released from SiH4. In the CVD process, SiH4 gas was used with high—density excited ArF excimer laser. Silicon films were deposited onto the nuclei by photodecomposition of SiH4.Chemical compositions of the modified layers and the deposited parts were inspected by XPS analysis. 1000 Å thickness of the deposited silicon films was confirmed by the surface roughness interference–meter.


2011 ◽  
Vol 110 (12) ◽  
pp. 124310 ◽  
Author(s):  
Luc Museur ◽  
Alexandra Manousaki ◽  
Demetrios Anglos ◽  
Andrei V. Kanaev

2001 ◽  
Vol 46 (2-3) ◽  
pp. 223-229 ◽  
Author(s):  
Xin Qu ◽  
Anders Wirsén ◽  
Björn Olander ◽  
Ann-Christine Albertsson

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