Low temperature processed 0.7SrBi2Ta2O9–0.3Bi3TaTiO9 thin films fabricated on multilayer electrode-barrier structure for high-density ferroelectric memories

AbstractIn the present work, we report on the fabrication of high quality microcrystalline Si thin films by high-density PECVD technique. The typical deposition rate of the HD-PECVD μ-Si thin films was greater than 350 Å/min in the H2/SiH4 ratio range of 20-100. For a 150-nm-thick film deposited at a H2/SiH4 ratio of 20, the typical microcrystalline volume fraction and the average crystallite size corresponding to <111> orientation were 75% and 160 Å, respectively. The observed growth and properties of the μ-Si thin films show the potential of the high-density PECVD technique for the low temperature processing of high quality films with superior control of bulk and interfacial characteristics.

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Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO3 Thin Films for High Density Dynamic Random Access Memory Capacitors

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.l195 ◽

1999 ◽

Vol 38 (Part 2, No. 2B) ◽

pp. L195-L198 ◽

Cited By ~ 4

Author(s):

Jae-Hyun Joo ◽

Jong-Bum Park ◽

Younsoo Kim ◽

Kong-Soo Lee ◽

Jun-Sik Lee ◽

...

Keyword(s):

Thin Films ◽

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Random Access ◽

Chemical Vapor ◽

Random Access Memory ◽

High Density ◽

Access Memory ◽

Density Dynamic

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Observation by HVEM of the martensite transformation and the superconducting transition in Nb3Sn

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106004 ◽

1988 ◽

Vol 46 ◽

pp. 788-789

Author(s):

M. A. Kirk ◽

M. C. Baker ◽

B. J. Kestel ◽

H. W. Weber

Keyword(s):

Thin Films ◽

Low Temperature ◽

Superconducting State ◽

Martensite Transformation ◽

Sputter Deposition ◽

Diffusion Reaction ◽

Solute Diffusion ◽

Superconducting Transition ◽

Twin Boundaries ◽

Martensite Structure

It is well known that a number of compound superconductors with the A15 structure undergo a martensite transformation when cooled to the superconducting state. Nb3Sn is one of those compounds that transforms, at least partially, from a cubic to tetragonal structure near 43 K. To our knowledge this transformation in Nb3Sn has not been studied by TEM. In fact, the only low temperature TEM study of an A15 material, V3Si, was performed by Goringe and Valdre over 20 years ago. They found the martensite structure in some foil areas at temperatures between 11 and 29 K, accompanied by faults that consisted of coherent twin boundaries on {110} planes. In pursuing our studies of irradiation defects in superconductors, we are the first to observe by TEM a similar martensite structure in Nb3Sn.Samples of Nb3Sn suitable for TEM studies have been produced by both a liquid solute diffusion reaction and by sputter deposition of thin films.

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The Correlation of Adhesion Strength with Barrier Structure in Cu Metallization

MRS Proceedings ◽

10.1557/proc-766-e.3.5 ◽

2003 ◽

Vol 766 ◽

Author(s):

A. Sekiguchi ◽

J. Koike ◽

K. Ueoka ◽

J. Ye ◽

H. Okamura ◽

...

Keyword(s):

Thin Films ◽

Adhesion Strength ◽

Nitrogen Concentration ◽

Scratch Test ◽

Barrier Structure ◽

Barrier Layers ◽

Cu Metallization ◽

Microstructure Observation ◽

Sputter Deposited ◽

Sulfur Containing

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.

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