A Grease for Domain Walls Motion in HfO2-based Ferroelectrics

A large coercive field EC of HfO2 based ferroelectric devices poses critical performance issues in their applications as ferroelectric memories and ferroelectric field effect transistors. A new design to reduce EC by fabricating nanolaminate Hf0.5Zr0.5O2 / ZrO2 (HZZ) thin films is used, followed by an ensuing annealing process at a comparatively high temperature 700 °C. High-resolution electron microscopy imaging detects tetragonal-like domain walls between orthorhombic polar regions. These walls decrease the potential barrier of polarization reversal in HfO2 based films compared to the conventional domain walls with a single non-polar spacer, causing about a 40% decrease in EC. Capacitance vs. electric field measurements on HZZ thin film uncovered a substantial increase of dielectric permittivity near the EC compared to the conventional Hf0.5Zr0.5O2 thin film, justifying the higher mobility of domain walls in the developed HZZ film. The tetragonal-like regions served as grease easing the movement of the domain wall and reducing EC

Quantitative investigation of polarization-dependent photocurrent in ferroelectric thin films

Ferroelectric thin films are investigated for their potential in photovoltaic (PV) applications, owing to their high open-circuit voltage and switchable photovoltaic effect. The direction of the ferroelectric polarization can control the sign of the photocurrent through the ferroelectric layer, theoretically allowing for 100 percent switchability of the photocurrent with the polarization, which is particularly interesting for photo-ferroelectric memories. However, the quantitative relationship between photocurrent and polarization remains little studied. In this work, a careful investigation of the polarization-dependent photocurrent of epitaxial Pb(Zr,Ti)O3 thin films has been carried out, and has provided a quantitative determination of the unswitchable part of ferroelectric polarization. These results represent a systematic approach to study and optimize the switchability of photocurrent, and more broadly to get important insights on the ferroelectric behavior in all types of ferroelectric layers in which pinned polarization is difficult to investigate.

Renaissance of Ferroelectric Memories: Can They Be a Game-changer?

Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.

Nanoscale bubble domains with polar topologies in bulk ferroelectrics

Multitudinous topological configurations spawn oases of many physical properties and phenomena in condensed-matter physics. Nano-sized ferroelectric bubble domains with various polar topologies (e.g., vortices, skyrmions) achieved in ferroelectric films present great potential for valuable physical properties. However, experimentally manipulating bubble domains has remained elusive especially in the bulk form. Here, in any bulk material, we achieve self-confined bubble domains with multiple polar topologies in bulk Bi0.5Na0.5TiO3 ferroelectrics, especially skyrmions, as validated by direct Z-contrast imaging. This phenomenon is driven by the interplay of bulk, elastic and electrostatic energies of coexisting modulated phases with strong and weak spontaneous polarizations. We demonstrate reversable and tip-voltage magnitude/time-dependent donut-like domain morphology evolution towards continuously and reversibly modulated high-density nonvolatile ferroelectric memories.

Non-volatile optical switch of resistance in photoferroelectric tunnel junctions

In the quest for energy efficient and fast memory elements, optically controlled ferroelectric memories are promising candidates. Here, we show that, by taking advantage of the imprint electric field existing in the nanometric BaTiO3 films and their photovoltaic response at visible light, the polarization of suitably written domains can be reversed under illumination. We exploit this effect to trigger and measure the associate change of resistance in tunnel devices. We show that engineering the device structure by inserting an auxiliary dielectric layer, the electroresistance increases by a factor near 2 × 103%, and a robust electric and optic cycling of the device can be obtained mimicking the operation of a memory device under dual control of light and electric fields.

Nanoscale continuous transition from monoclinic to ferroelectric orthorhombic inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping

Orthorhombic HfO2 exhibits nanoscale ferroelectricity that opens the perspective of ultra-scalable CMOS integration of ferroelectric memories. However, many aspects of the metastable orthorhombic crystallization mechanisms need still to be elucidated...

Nanoscale bubble domains with polar topologies in bulk ferroelectrics

Multitudinous topological configurations spawn new oases of novel phenomena and physical properties in condensed-matter physics1. Nano-sized ferroelectric bubble domains with various polar topologies (e.g., vortices, skyrmions) achieved in ferroelectric films present great potential for valuable physical properties2–5. However, experimentally manipulating bubble domains has remained elusive especially in the bulk form. Here, for the first time in any bulk material, we achieve self-confined bubble domains with multiple polar topologies in bulk Bi0.5Na0.5TiO3 ferroelectrics, especially skyrmions, as validated by direct Z-contrast imaging. This phenomenon is driven by the interplay of bulk, elastic and electrostatic energies of coexisting modulated phases with strong and weak spontaneous polarizations. We demonstrate reversable and tip-voltage magnitude/time-dependent donut-like domain morphology evolution towards continuously and reversibly modulated high-density nonvolatile ferroelectric memories.